Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4 and SF6
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We apply metal organic chemical vapour deposition (MOCVD) of HfO2 and of ZrO2 from beta-diketonate precursors to grow high-k gate dielectrics for InAlN/AlN/GaN metal oxide semiconductor (MOS)-high electron mobility transistors (HEMTs). High-k oxides of abo ...
