Publication
A CMOS Compatible Ge-on-Si APD Operating in Proportional and Geiger Modes at Infrared Wavelengths
Publications associées (27)
LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor
GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...
EPFL2022An Analog-Assisted Digital LDO With Single Subthreshold Output pMOS Achieving 1.44-fs FOM
This letter describes an analog-assisted digital LDO that cascades a conventional digital LDO structure with a single, large output pMOS biased in subthreshold to enable fast response to output voltage droop. By digitally controlling the gate voltage of th ...
IEEE2021Dimensional scaling of high-speed printed organic transistors enabling high-frequency operation
Printed electronics has promised to deliver low-cost, large-area and flexible electronics for mass-market applications for some time; however, so far one limiting factor has been device performance. Over the last decade, great progress has been made in ter ...
IOP PUBLISHING LTD2020AlGaN/GaN Nanowires: from Electron Transport to RF Applications
Gallium Nitride (GaN) and all III-Nitride compounds have revolutionized the world with the development of the blue light emitting diode (LED). In addition, GaN-based epi-structures, such as AlGaN/GaN, enable the fabrication of high electron mobility transi ...
EPFL2020Cmos image sensor
Assim Boukhayma, Arnaud Peizerat
A CMOS image sensor including a pixel including: a photodiode in series with a MOS transistor between a first reference potential and a sense node; a MOS transistor connecting the sense node to a second reference potential; and a third MOS transistor assem ...
2016III-V Nanowire Hetero-junction Tunnel FETs integrated on Si
In the last decade the power consumption of electronic devices has increased for both static and active components. Following the Dennard's scaling rule, as long as the transistor sizes are reduced then the supply voltage (VDD) can also be scaled in order ...
EPFL2016