Three-dimensional integrated circuitA three-dimensional integrated circuit (3D IC) is a MOS (metal-oxide semiconductor) integrated circuit (IC) manufactured by stacking as many as 16 or more ICs and interconnecting them vertically using, for instance, through-silicon vias (TSVs) or Cu-Cu connections, so that they behave as a single device to achieve performance improvements at reduced power and smaller footprint than conventional two dimensional processes. The 3D IC is one of several 3D integration schemes that exploit the z-direction to achieve electrical performance benefits in microelectronics and nanoelectronics.
MESFETA MESFET (metal–semiconductor field-effect transistor) is a field-effect transistor semiconductor device similar to a JFET with a Schottky (metal–semiconductor) junction instead of a p–n junction for a gate. MESFETs are constructed in compound semiconductor technologies lacking high quality surface passivation, such as gallium arsenide, indium phosphide, or silicon carbide, and are faster but more expensive than silicon-based JFETs or MOSFETs.
Canal potassique voltage-dépendantVoltage-gated potassium channels (VGKCs) are transmembrane channels specific for potassium and sensitive to voltage changes in the cell's membrane potential. During action potentials, they play a crucial role in returning the depolarized cell to a resting state. Alpha subunits form the actual conductance pore. Based on sequence homology of the hydrophobic transmembrane cores, the alpha subunits of voltage-gated potassium channels are grouped into 12 classes. These are labeled Kvα1-12.
Fonction NONLa fonction NON (NOT en anglais) est un opérateur logique de l'algèbre de Boole et exprime un « état » en fonction de conditions. À un opérande, qui peut avoir la valeur VRAI ou FAUX, il associe un résultat qui a lui-même la valeur inverse de celle de l'opérande. Le circuit intégré 7404 intègre six portes logiques inverseuses du type NON. On la note Il correspond, en arithmétique, à : Une lampe s'allume lorsque l'on n'appuie pas sur « a ». La fonction « NON » est caractérisée par un interrupteur NF (normalement fermé).
Multigate deviceA multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET).
Standard cellIn semiconductor design, standard-cell methodology is a method of designing application-specific integrated circuits (ASICs) with mostly digital-logic features. Standard-cell methodology is an example of design abstraction, whereby a low-level very-large-scale integration (VLSI) layout is encapsulated into an abstract logic representation (such as a NAND gate). Cell-based methodology – the general class to which standard cells belong – makes it possible for one designer to focus on the high-level (logical function) aspect of digital design, while another designer focuses on the implementation (physical) aspect.
Voltage-gated calcium channelVoltage-gated calcium channels (VGCCs), also known as voltage-dependent calcium channels (VDCCs), are a group of voltage-gated ion channels found in the membrane of excitable cells (e.g., muscle, glial cells, neurons, etc.) with a permeability to the calcium ion Ca2+. These channels are slightly permeable to sodium ions, so they are also called Ca2+-Na+ channels, but their permeability to calcium is about 1000-fold greater than to sodium under normal physiological conditions.
Diélectrique high-kUn diélectrique high-κ (high-κ dielectric) est un matériau avec une constante diélectrique κ élevée (comparée à celle du dioxyde de silicium) utilisé dans la fabrication de composants semi-conducteur en remplacement de la grille habituellement en dioxyde de silicium. L'utilisation de ce type de matériau constitue l'une des stratégies de développement permettant la miniaturisation des composés en microélectronique, afin de permettre de continuer à suivre la Loi de Moore.
Circuit logique programmableUn circuit logique programmable ou PLD (Programmable Logical Device), est un circuit intégré logique qui peut être programmé après sa fabrication. Il se compose de nombreuses cellules logiques élémentaires contenant des bascules logiques librement connectables. L'utilisateur doit donc programmer le circuit avant de l'utiliser. Les différentes logiques de programmation (unique, reprogrammable) et d'architecture ont conduit à la création de sous-familles dont les plus connues sont les FPGA et les CPLD.
Subthreshold conductionSubthreshold conduction or subthreshold leakage or subthreshold drain current is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage. The amount of subthreshold conduction in a transistor is set by its threshold voltage, which is the minimum gate voltage required to switch the device between on and off states.
