Discrete dislocation dynamics simulations of dislocation interactions with Y2O3 particles in PM2000 single crystals
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Non-polar a-GaN films grown on r-sapphire by hydride vapor phase epitaxy (HVPE) are studied using transmission electron microscopy (TEM). Despite the small lattice mismatch in a-GaN ([1 0 (1) over bar 0] similar to 1.1% and [0 00 1] similar to 16%), high d ...
Multiscale modeling, including molecular dynamics (MD) and discrete dislocation dynamics (DDD) methods, appears as a significant tool for the description of plasticity and mechanical properties of materials. This research concerns the influence of irradiat ...
Multiscale modeling, including molecular dynamics (MD) and discrete dislocation dynamics (DDD) methods, appears as a significant tool for the description of plasticity and mechanical properties of materials. This research concerns the influence of irradiatio ...
Gallium nitride (GaN) is one of the most interesting materials for devices applications such as blue light emitting diodes, laser diodes and high power and high temperature electronic applications, because of its large band gap (3.39 eV). Several growth te ...
The interaction of dislocations with grain boundaries (GBs) determines a number of important aspects of the mechanical performance of materials, including strengthening and fatigue resistance. Here, the coupled atomistic/discretedislocation ( CADD) multisc ...
The gamma surfaces in the pyramidal I {1 -1 0 1} and II {1 1 -2 2} planes for hexagonal close packed Mg have been calculated using two embedded-atom-method potentials and by ab initio methods, and reasonable agreement is obtained for key stacking fault ene ...
