Publication
Cryogenic MOSFET Threshold Voltage Model
Publications associées (33)
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Over the recent decades, the balance between increasing the complexity of computer chips and simultaneously reducing cost per bit has been accommodated by down-scaling. While extremely successful in the past, this approach now faces grave limitations leadi ...
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Technology scaling improves the energy, performance, and area of the digital circuits. With further scaling into sub-45nm regime, we are moving toward very low supply (VDD) and threshold voltages (VT), smaller VDD/VT ratio, high leakage current, and large ...
EPFL2011An Adjusted Constant-Current Method to Determine Saturated and Linear Mode Threshold Voltage of MOSFETs
Wladyslaw Grabinski, Antonios Bazigos, Matthias Bucher
The constant-current (CC) method uses a current criterion to determine the threshold voltage (VTH) of metal-oxide-semiconductor (MOS) field-effect transistors. We show that using the same current criterion in both saturation and linear modes leads to incon ...
2011Self heating in AlInN/AlN/GaN high power devices: Origin and impact on contact breakdown and IV characteristics
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It is observed experimentally that high electron mobility transistor devices with short channel length processed from nitride AlInN/AlN/GaN heterostructures containing 2D electron gases (2DEGs) with densities beyond 2 x 10(13) cm(-2) exhibit temperatures u ...
American Institute of Physics2011Field-Effect Transistors Based on ZnO Nanowires
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EPFL2010The high-mobility bended n-channel silicon nanowire transistor
Mihai Adrian Ionescu, Didier Bouvet, Kirsten Emilie Moselund, Vincent Pott, Luca De Michielis, Mohammad Najmzadeh
This work demonstrates a method for incorporating strain in silicon nanowire gate-all-around (GAA) n-MOSFETs by oxidation-induced bending of the nanowire channel and reports on the resulting improvement in device performance. The variation in strain measur ...
Institute of Electrical and Electronics Engineers2010Simulation of Double-Gate Silicon Tunnel FETs with a High-k Gate Dielectric
The down-scaling of conventional MOSFETs has led to an impending power crisis, in which static power consumption is becoming too high. In order to improve the energy-efficiency of electronic circuits, small swing switches are interesting candidates to repl ...
EPFL2010Compact modeling of high voltage MOSFETs
In the automotive industry, there is a strong trend that has increased the electronics in cars for various functions like fuel injection, electric control of doors and windows, electric chair adjustment, air conditioning etc. The 12V battery used in the pr ...
EPFL2007