n(+)-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts

Nicolas Grandjean, Jean-François Carlin, Etienne François Olivier Giraud, Marco Malinverni, Lorenzo Lugani, Daniel Marti
2014
Journal paper

Abstract

We report on the low-temperature growth of heavily Si-doped (>10(20) cm(-3)) n(+)-type GaN by N-rich ammonia molecular beam epitaxy (MBE) with very low bulk resistivity (

Official source

https://infoscience.epfl.ch/record/204029?ln=en

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n(+)-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts

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SiNx and AlOx Nanolayers in Hole Selective Passivating Contacts for High Efficiency Silicon Solar Cells

Direct high-temperature growth of single-crystalline GaN on ScAlMgO4 substrates by metalorganic chemical vapor deposition

GaN vertical power devices on silicon substrates