In electronics, a wafer (also called a slice or substrate) is a thin slice of semiconductor, such as a crystalline silicon (c-Si), used for the fabrication of integrated circuits and, in photovoltaics, to manufacture solar cells. The wafer serves as the substrate for microelectronic devices built in and upon the wafer. It undergoes many microfabrication processes, such as doping, ion implantation, etching, thin-film deposition of various materials, and photolithographic patterning. Finally, the individual microcircuits are separated by wafer dicing and packaged as an integrated circuit. List of silicon producers In the semiconductor or silicon wafer industry, the term wafer appeared in the 1950s to describe a thin round slice of semiconductor material, typically germanium or silicon. The round shape characteristic of these wafers comes from single-crystal ingots usually produced using the Czochralski method. Silicon wafers were first introduced in the 1940s. By 1960, silicon wafers were being manufactured in the U.S. by companies such as MEMC/SunEdison. In 1965, American engineers Eric O. Ernst, Donald J. Hurd, and Gerard Seeley, while working under IBM, filed Patent US3423629A for the first high-capacity epitaxial apparatus. Silicon wafers are made by companies such as Sumco, Shin-Etsu Chemical, Hemlock Semiconductor Corporation and Siltronic. Boule (crystal) Wafers are formed of highly pure, nearly defect-free single crystalline material, with a purity of 99.9999999% (9N) or higher. One process for forming crystalline wafers is known as the Czochralski method, invented by Polish chemist Jan Czochralski. In this process, a cylindrical ingot of high purity monocrystalline semiconductor, such as silicon or germanium, called a boule, is formed by pulling a seed crystal from a melt. Donor impurity atoms, such as boron or phosphorus in the case of silicon, can be added to the molten intrinsic material in precise amounts in order to dope the crystal, thus changing it into an extrinsic semiconductor of n-type or p-type.

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