Organic semiconductor | EPFL Graph Search

Organic semiconductors are solids whose building blocks are pi-bonded molecules or polymers made up by carbon and hydrogen atoms and – at times – heteroatoms such as nitrogen, sulfur and oxygen. They exist in the form of molecular crystals or amorphous thin films. In general, they are electrical insulators, but become semiconducting when charges are either injected from appropriate electrodes, upon doping or by photoexcitation. General properties In molecular crystals the energetic separation between the top of the valence band and the bottom conduction band, i.e. the band gap, is typically 2.5–4 eV, while in inorganic semiconductors the band gaps are typically 1–2 eV. This implies that they are, in fact, insulators rather than semiconductors in the conventional sense. They become semiconducting only when charge carriers are either injected from the electrodes or generated by intentional or unintentional doping. Charge carriers can also be generated in the course of

Dynamics of Electronic and Ionic Charges in Cyanine Organic Semiconductor Devices

Sandra Christina Jenatsch

Organic semiconductor materials have been widely applied in optoelectronic devices to replace their inorganic counterparts and explore new fields of applications. Due to their high extinction coefficients, chemical tunability and solubility, cyanine dyes are an interesting class of molecules to be employed in organic semiconductor devices. Their beneficial properties have been demonstrated in organic solar cells (OSC), photodetectors and recently in organic light-emitting electrochemical cells (OLEC). The focus of this thesis is to analyse different aspects regarding the dynamics of electronic and ionic charges in cyanine based devices. Models and conclusions are not restricted to cyanine based devices but can potentially be applied in various systems where combined ionic and electronic charges are present. In order to focus on electronic processes in OSCs, a combination of steady-state, transient and impedance analysis is used. It is resolved that trapped charges can be introduced at the dye/hole extracting layer interface by using specific solvents for the cyanine layer fabrication. These measurements also reveal the low hole mobility of cyanine films which in turn limits the possible upper layer thickness in OSCs. A frequently used way to enhance the conductivity of organic semiconductors is the addition of extra charges by chemical doping. This concept is employed for a near-infrared absorbing dye which is used as donor in a bilayer solar cell. The dependence of all figures of merit versus doping concentration and layer thickness is studied in detail. It is found that the performance of the optimised cell is not further improved by doping, but that it presents a good option if thicker layers are required, e.g. on rough substrates. Furthermore, the stability and degradation pathway of the p-doped species is analysed. This information is of general relevance as they also occur after charge transfer at the heterojunction interface of an OSC and during operation of OLECs. The dynamics of ionic charge carriers is separated into two contributions. In a first step, the steady-state diffusion profile of the counter ion within a cyanine/fullerene bilayer structure is scrutinised using different profiling techniques. An unexpected constant ion profile is found throughout the C60 layer. Simultaneously, the potential within the acceptor is measured by the Kelvin probe technique. A mechanism of combined electron and ion transfer from the C60 to the dye and vice versa is proposed which is in agreement with the experimental results. A prerequisite for OLEC operation is the mobility of ionic charge carriers. Their dynamics in cyanine salts under the effect of an external field is therefore studied in such devices. Several methods are developed and applied to characterise the dynamic p-i-n structure in detail, i.e. the position and width of the intrinsic region as well as the doping concentrations in p- and n-doped regions. The combination of all these methods helps to understand the transient behaviour of these cyanine devices but can also be adapted to other OLEC systems. A major drawback of cyanine dyes as emissive material is their low fluorescence quantum yield in solid films. To overcome this restriction and improve the OLEC efficiency, host-guest systems with various visibly emitting dyes are studied. The gain in fluorescence quantum yield in the film can directly be transferred to an increase in external quantum efficiency of the device.

EPFL2017

Spatial and Morphological Control of Cyanine Dye Thin Films

Nicolas Alexandre Serge Leclaire

Cyanine dyes are organic semiconductor compounds with light absorption and emission properties useful for emerging technologies such as solar cells and light-emitting devices. The characteristics of these materials in the solid state depend on their organization of the constituting building blocks. This thesis focuses on controlling the morphology of cyanine dye thin films at different length scales and clarifying the resulting properties. When microstructures present features whose size matches visible light wavelengths, new properties may arise from light-matter interactions. Here the properties resulting from the light-matter interactions of cyanine droplet films cast from solution are studied. Based on experimental evidence, it is shown that dye droplet ensembles scatter light with different efficiencies and wavelength ranges depending on their dimensions. FDTD simulations are used to show that this effect results fromscattering enhancement at the absorption edge of the dye where the refractive index varies considerably. Simulations also provide a better understanding of individual dropletsâ interaction with light. While earlier work had hypothesized that the observed scattering phenomenon were due to crystalline clusters within the droplets, this work highlights the contribution of the dye filmmorphology. Cyanines also form single crystals whose fabrication induces molecular-scale order in the material. Previous work demonstrated that thin single crystals could be grown by solvent vapor annealing of dye droplets. Here it is shown that in uncontrolled conditions, cyanine single crystals destabilize to formdendritic crystals. In-situ microscopy observations highlight the solute reservoir role of the droplet distribution surrounding a growing crystal; when the distance between droplets and the crystal front is large, the solute supply is diffusion-limited. Moreover variations in local pressure equilibrium between the droplets and crystal front lead to advection fluxes which perturb the crystal growth. These observations help design configurations to either prevent crystal destabilization or take advantage of the dendritic growth in a controlled manner. In addition, the patterning of crystals on a substrate is relevant for their application in devices. A practical challenge is to induce single crystal growth at specific locations. Here, surfaces patterned with SAMs of hydrophilic and hydrophobic thiols are used to create dye droplet arrays from which crystals can be grown. This method is shown to yield local crystallization of the dye and to prevent crystal destabilization through better control of the droplet distribution. By varying the dye solution concentration, partial control over crystal density is achieved, however it proved difficult to control the number of nuclei per droplet. A more controlled evaporation and solvent vapor annealing system might be necessary to master the nucleation process. Finally the structure and optical properties of cyanine single crystals are addressed. The crystal structure was determined by X-ray diffraction. Structural aspects are shown to lead to excitonic couplings, which are evidenced by orientation-dependent spectroscopic measurements of single crystals. Although further investigation of the absorption band structure is necessary, the results are promising for photovoltaic devices as they might improve exciton transport compared to amorphous layers.

EPFL2018

Contact resistance effects in organic n-channel thin-film transistors

Reinhold Rödel

Organic thin-film transistors (TFTs) have undergone tremendous progress in the past few years. Their great potential in terms of mechanical flexibility, light weight, low-cost and large-area fabrication makes them promising candidates for novel electronic products, such as sensor arrays, radio-frequency identification tags and flexible displays. For the realization of these applications and to improve their performance it is necessary to miniaturize organic TFTs to dimensions of a few micrometers or even less. However, with such aggressive scaling, the device physics becomes more and more important. Especially the contact resistance at and close to the interface between the organic semiconductor and the source/drain metal limits the performance of the organic TFTs at miniaturized dimensions. In this thesis, the contact properties of bottom-gate, top-contact n-channel organic transistors are investigated using the gated four-probe (GFP) technique. The TFTs employ the small-molecule semiconductor N,N'-bis-(1H,1H-heptafluorobutyl)-1,7-dicyano-perylene-3,4:9,10-tetracarboxylic diimide (PDI-FCN2) and are fabricated on flexible plastic substrates. The transistors are air-stable and can be operated at low voltages of about 3 V, owing to a thin hybrid gate dielectric composed of aluminum oxide and a self-assembled molecular monolayer. The GFP method enabled a detailed investigation of the influence of a multitude of factors, including the gate-source and drain-source voltages, the contact length, the temperature and the contact metal, on the contact resistance. The contact properties are found to be very sensitive to the thickness of the organic semiconductor layer. In transistors in which this layer is relatively thin, ohmic contact resistances as small as about 0.6 Ohm cm were measured. In transistors with a relatively thick organic semiconductor layer, device physics becomes more complex and the current-voltage characteristics of the contact become nonlinear. Space-charge limited currents are identified as the probable origin of this nonlinear behavior. The good performance of the PDI-FCN2 transistors allows the realization of simple integrated circuits. Flexible organic complementary ring oscillators are fabricated and signal propagation delays per stage as short as 6 µs are demonstrated at a supply voltage of 3.6 V.

EPFL2016