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Related publications (16)

A 128-kbit GC-eDRAM With Negative Boosted Bootstrap Driver for 11.3x Lower-Refresh Frequency at a 2.5% Area Overhead in 28-nm FD-SOI

Andreas Peter Burg, Robert Giterman, Halil Andac Yigit, Emmanuel Nieto Casarrubias

Gain-cell embedded DRAM (GC-eDRAM) is a high-density logic-compatible alternative to conventional static random-access memory (SRAM) and embedded DRAM (eDRAM). However, GC-eDRAM suffers from a reduced data retention time (DRT) at deeply-scaled process node ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

The Digital Ethics Canvas: A Guide For Ethical Risk Assessment And Mitigation In The Digital Domain

Patrick Jermann, Cécile Hardebolle, Vivek Ramachandran, Vladimir Macko, Adrian Christian Holzer

Ethical concerns in the digital domain are growing with the extremely fast evolution of technology and the increasing scale at which software is deployed, potentially affecting our societies globally. It is crucial that engineers evaluate more systematical ...

2023

Current-Based Data-Retention-Time Characterization of Gain-Cell Embedded DRAMs Across the Design and Variations Space

Andreas Peter Burg, Adam Shmuel Teman, Robert Giterman, Andrea Bonetti

The rise of data-intensive applications has resulted in an increasing demand for high-density and low-power on-chip embedded memories. Gain-cell embedded DRAM (GC-eDRAM) is a logic-compatible alternative to conventional static random access memory (SRAM) w ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Replica Bit-Line Technique for Internal Refresh in Logic-Compatible Gain-Cell Embedded DRAM

Robert Giterman, Odem Harel

Embedded memories, mostly implemented with static random access memory (SRAM), dominate the area and power of integrated circuits. Gain-cell embedded DRAM (GC-eDRAM) is an alternative to SRAM due to its high density, low power consumption, and two-ported f ...

ELSEVIER SCI LTD2020

Data-Retention-Time Characterization of Gain-Cell eDRAMs across the Design and Variations Space

Andreas Peter Burg, Andrea Bonetti

The rise of data-intensive applications has increased the demand for high-density and low-power embedded memories. Among them, the gain-cell embedded DRAM (GC-eDRAM) is a suitable alternative to the static random access memory (SRAM) due to its high memory ...

IEEE2019

Low-Power Design of Digital VLSI Circuits around the Point of First Failure

Andrea Bonetti

As an increase of intelligent and self-powered devices is forecasted for our future everyday life, the implementation of energy-autonomous devices that can wirelessly communicate data from sensors is crucial. Even though techniques such as voltage scaling ...

EPFL2019

Optimized Memory Access For Dynamically Scheduled High Level Synthesis

Paolo Ienne, Atri Bhattacharyya

Dynamically-scheduled elastic circuits generated by High-Level Synthesis (HLS) tools are inherently out-of-order, following the flow of data rather than the evolution of an instruction pointer. Components of the circuit which access memory need to be conne ...

2018

Neural Dynamics of Grouping and Segmentation Explain Properties of Visual Crowding

Michael Herzog, Gregory Francis, Mauro Manassi

Investigations of visual crowding, where a target is difficult to identify because of flanking elements, has largely used a theoretical perspective based on local interactions where flanking elements pool with or substitute for properties of the target. Th ...

American Psychological Association2017

A start-up boosting circuit with 133× speed gain for 2-transistor voltage reference

Kyojin Choo

This work presents a start-up boosting circuit designed for fast stabilization of a 2-transistor voltage reference. A clock injection method is used to induce a large bias on the 2-transistor voltage reference resulting in a fast output voltage settling wh ...

IEEE2017

Fabrication, Characterization and Integration of Resistive Random Access Memories

Jury Sandrini

The functionalities and performances of today's computing systems are increasingly dependent on the memory block. This phenomenon, also referred as the Von Neumann bottleneck, is the main motivation for the research on memory technologies. Despite CMOS tec ...

EPFL2017

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