Concept

Effective mass (solid-state physics)

Related publications (299)

Reduction of the sign problem near T=0 in quantum Monte Carlo simulations

Building on a recent investigation of the Shastry-Sutherland model [S. Wessel et al., Phys. Rev. B 98, 174432 (2018)], we develop a general strategy to eliminate the Monte Carlo sign problem near the zero-temperature limit in frustrated quantum spin models ...

AMER PHYSICAL SOC2020

Optoelectronic and Energy Level Exploration of Bismuth and Antimony-Based Materials for Lead-Free Solar Cells

Mohammad Khaja Nazeeruddin, Hiroyuki Kanda, Inés Garcia Benito, Ryosuke Nishikubo

Bismuth- and antimony-based materials, such as A(3)M(2)X(9) and AMSX(2) (A = cation, M = Bi, Sb, S = sulfur, X = halogen), are promising candidates as the counterpart to lead halide perovskite. However, the large number of different compositions and crysta ...

2020

Band alignment at beta-Ga2O3/III-N (III = Al, Ga) interfaces through hybrid functional calculations

Alfredo Pasquarello, Sai Lyu

The band alignment and the chemical bonding at the beta -Ga2O3/AlN and beta -Ga2O3/GaN interfaces are studied through hybrid functional calculations. We construct realistic slab models with III-O (III = Al, Ga) bonds dominating the chemical bonding at both ...

2020

Charge Separation and Charge Carrier Mobility in Photocatalytic Metal‐Organic Frameworks

Berend Smit, Ivano Tavernelli, Kevin Maik Jablonka, Maria Fumanal Quintana

Metal‐organic frameworks (MOFs) are highly versatile materials owing to their vast structural and chemical tunability. These hybrid inorganic–organic crystalline materials offer an ideal platform to incorporate light‐harvesting and catalytic centers and th ...

2020

Formation, electronic structure, and optical properties of self-assembled quantum-dot single-photon emitters in Ga(N,As,P) nanowires

Luca Francaviglia

Quantum dots (QDs) formed in semiconductor nanowires (NWs) form a basis for studying interesting quantum phenomena and provide an exciting platform for various device applications, where in-depth understanding of the formation and electronic properties of ...

2020

Effective field theory for acoustic and pseudoacoustic phonons in solids

Angelo Esposito, Emma Michèle Ginette Geoffray

We present a relativistic effective field theory for the interaction between acoustic and gapped phonons in the limit of a small gap. We show that, while the former are the Goldstone modes associated with the spontaneous breaking of spacetime symmetries, t ...

AMER PHYSICAL SOC2020

Prospects of Observing Ionic Coulomb Blockade in Artificial Ion Confinements

Aleksandra Radenovic, Andrey Chernev, Sanjin Marion

Nanofluidics encompasses a wide range of advanced approaches to study charge and mass transport at the nanoscale. Modern technologies allow us to develop and improve artificial nanofluidic platforms that confine ions in a way similar to single-ion channels ...

MDPI2020

Highly anisotropic interlayer magnetoresitance in ZrSiS nodal-line Dirac semimetal

Oleg Yazyev, Quansheng Wu, Shengnan Zhang, Xiaoqiang Wang

We instigate the angle-dependent magnetoresistance (AMR) of the layered nodal-line Dirac semimetal ZrSiS for the in-plane and out-of-plane current directions. This material has recently revealed an intriguing butterfly-shaped in-plane AMR whose origin is n ...

AMER PHYSICAL SOC2019

Impact of Strain and Alloy Disorder on the Electronic Properties of III-Nitride Based Two-dimensional Electron Gases

Pirouz Sohi

Over the past 20 years, III-nitrides (GaN, AlN, InN and their alloys) have proven to be an excellent material group for electronic devices, in particular, for high electron mobility transistors (HEMTs) operating at high frequency and high power. This is ma ...

EPFL2019

High performance Fully-vertical GaN-on-Si power MOSFETs

Elison de Nazareth Matioli, Chao Liu

We report the first demonstration of fully-vertical power MOSFETs on 6.6-μm-thick GaN grown on a 6-inch Si substrate by metal-organic chemical vapor deposition (MOCVD). A robust fabrication method was developed based on a selective and local removal of the ...

IEEE2019

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