Dopant | EPFL Graph Search

A dopant (also called a doping agent) is a trace of impurity element that is introduced into a chemical material to alter its original electrical or optical properties. The amount of dopant necessary to cause changes is typically very low. When doped into crystalline substances, the dopant's atoms get incorporated into its crystal lattice. The crystalline materials are frequently either crystals of a semiconductor such as silicon and germanium for use in solid-state electronics, or transparent crystals for use in the production of various laser types; however, in some cases of the latter, noncrystalline substances such as glass can also be doped with impurities. In solid-state electronics using the proper types and amounts of dopants in semiconductors is what produces the p-type semiconductors and n-type semiconductors that are essential for making transistors and diodes. Transparent crystals Lasing media The procedure of doping tiny amounts of the metals chrom

Field-Effect Transistors Based on ZnO Nanowires

Daniel Dominik Kälblein

Semiconductor nanowires are an emerging class of materials with great potential for applications in future electronic devices. The small footprint and the large charge-carrier mobilities of nanowires make them potentially useful for applications with high-integration density, but also to replace thin-film transistors in large-area electronics. This thesis investigates the use of wet-chemically grown ZnO nanowires for the fabrication of high-performance, low-voltage field-effect transistors (FETs). The first part of this thesis addresses the electrical characteristics of the wet-chemically grown ZnO nanowires. The as-grown ZnO nanowires are highly conductive due to a large charge-carrier concentration caused by dopants unintentionally incorporated into the ZnO nanowires during the synthesis. This large charge-carrier concentration makes it difficult to modulate the conductivity of the nanowires by an external electric field, so that the as-grown wires are not suitable for FETs. A post-growth annealing step is employed to dramatically reduce the charge-carrier concentration of the nanowires which makes it possible to fabricate FETs with useful characteristics. ZnO-nanowire FETs in a global back-gate geometry based on annealed ZnO nanowires have a transconductance of 300 nS, an on/off current ratio of 107 and a subthrehold slope of 500 mV/decade. The maximum field-effect mobility of the annealed ZnO nanowires is around 50 cm2/Vs. An important requirement to obtain good FET characterisitcs is to minimize the influence of the source and drain contact resistance on the total device resistance. The material used for the source and drain contacts in this thesis is aluminum. It is demonstrated that the use of a plasma treatment in the contact regions prior to the evaporation of the aluminum contacts can greatly influence the contact properties between ZnO and aluminum. An argon-plasma treatment locally increases the charge-carrier concentration in the ZnO. It is shown that the doping effect of the argon-plasma treatment can be exploited to reduce the contact resistance between alumiunm and ZnO and improve the electrical performance of the FETs. In the second part of this thesis, the influence of the ambient air on the electrical characteristics of the ZnO-nanowire FETs is investigated. The electrical conductivity of the FETs is strongly affected by the distinct atmospheric conditions, which makes it difficult to obtain reliable FET characteristics. The potential of a self-assembled monolayer (SAM) based on fluoroalkylphosphonic acid molecules to passivate the ZnO nanowires against the undesirable effects of the ambient and to stabilize the electrical performance of ZnO-nanowire FETs is demonstrated. The stabilizing effect is attributed to the formation of a densely packed, hydrophobic SAM on the surface of ZnO and aluminum oxide. The quality of the hydrophobic SAMs is confirmed by means of water-contact-angle measurements on SAM-covered ZnO single crystals that show a contact angle of more than 110°. The third part of this thesis is dedicated to the fabrication of high-performance ZnO-nanowire FETs with patterned metal top-gate electrodes. A top-gate fabrication process is developed that uses a very thin gate dielectric consisting only of an alkylphosphonic acid SAM that can be deposited from solution. The insulating quality of the SAM is investigated for top-gate FETs that utilize either gold or aluminum for the top-gate electrode. Gold top-gate FETs show a transconductance of 1 µS, an on/off current ratio of 107, and a steep subthreshold slope of 90 mV/decade. The thin gate dielectric makes it possible to operate the gold top-gate FETs at low voltages of 1 V and simultaneously reduces the undesired gate current by more than three orders of magnitude compared to gold top-gate FETs that have been fabricated without a gate dielectric (MESFETs). The gate current of the gold top-gate FETs with SAM gate dielectric is as low as 1 pA for gate-source voltages between -1 V and 0.5 V. When aluminum is used for the top-gate electrode, a hybrid dielectric is formed at the interface between the SAM and the aluminum, consisting of the SAM and a spontaneously formed aluminum oxide layer. Owing to the hybrid gate dielectric, the aluminum top-gate FETs are operated with gate currents below 1 pA for voltages up to 3 V. The top-gate fabrication process does not require temperatures above 160 °C, which makes it possible to fabricate FETs on unconventional substrates that cannot tolerate high temperatures, such as glass or flexible plastics. Integrated circuits on single ZnO nanowires that are fabricated on glass and plastic substrates are demonstrated. The maximum switching frequency of the inverters is 1 MHz.

EPFL2011

Electronic properties of nano-crystalline titanium dioxide thin films

Alain Bally

Titanium dioxide is a cheap, chemically stable and non-toxic material. However its electrical properties are unstable and it is a modest semiconductor and a mediocre insulator. For several applications it would be interesting to make it either more insulating or more conducting. The goal of this work was to modify the electrical properties of nano-crystalline TiO2 thin films deposited by reactive sputtering and to understand the mechanism leading to these modifications. The principal factors that influence the electrical conductivity are on the one hand the concentration and nature of the chemical impurities incorporated in TiO2, and on the other hand the morphology of the thin films. The study was split into two parts. The fist part describes the modifications of the sputtered material obtained by chemical doping of the TiO2 thin films. Niobium, cerium, iron, and fluorine were incorporated successfully in TiO2. The second part describes the modifications obtained by modifying the reactive gas used during the sputtering process: thus oxygen was substituted with water vapor. Several analysis techniques have been used to characterize the TiO2 thin films. They are essentially divided in four categories. The chemical analyses included electron probe microanalyses, x-ray photoemission spectroscopy, and secondary ion mass spectrometry. The structure and morphology analyses of thin films were carried out with x-ray diffraction and atomic force microscopy. The electrical properties in dc or ac mode were measured between room temperature and 350°C. Finally optical transmission provided information on the electronic states and morphology of the thin films. With an appropriate choice of impurities, titanium dioxide can be made more insulating (TiO2:Ce), more conducting with an n-type electrical conductivity (TiO2:Nb) or p-type electrical conductivity (TiO2:Fe). Chemical doping is also the cause of important structure and morphology changes, for example it can force the transformation from the anatase to the rutile structure. It is shown in particular that dopant atoms generate defects such as oxygen vacancies. These defects impede the variation of the electrical conductivity produced by the impurities, thus, in spite of dopant concentration in the percent range, the variation of the electrical conductivity is an increase or a decrease of three order of magnitude at most when compared with undoped TiO2. Thin films deposited with water vapor as the reactive gas present an increase in the electrical conductivity by height order of magnitude compared to samples prepared with oxygen in similar conditions. No atom other than titanium or oxygen could be detected in the thin films in significant concentration. The dramatic conductivity increase is due to the injection inside TiO2 grains of electrons donated by unsaturated titanium atoms lying on the grain surface. A nanometric grain size is a requirement to make such high doping levels possible. Depending on the impurities or reactive gas selected, titanium dioxide can be made either into a good insulator with a high breakdown field and a high permittivity or into a reasonably conducting, transparent film. The electrical conductivity of the samples prepared for this study cover the range from 10-10 to 103 S m-1.

EPFL1999

Monolayer Doping of Silicon through Grafting a Tailored Molecular Phosphorus Precursor onto Oxide-Passivated Silicon Surfaces

David Lyndon Emsley, Tsung-Han Lin, Aaron James Rossini

Monolayer doping (MLD) of silicon substrates at the nanoscale is a powerful method to provide controlled doses of dopants and defect-free materials. However, this approach requires the deposition of a thick SiO2 cap layer to limit dopant evaporation during annealing. Here, we describe the controlled surface doping of thin oxide-passivated silicon wafers through a two-step process involving the grafting of a molecular phosphorus precursor containing a polyhedral oligomeric silsesquioxane (POSS) scaffold with silica-like architecture and thermal annealing. We show that the POSS scaffold favors the controlled formation of dopant-containing surface species with up to similar to 8 x 10(13) P atoms cm(-2) and efficiently avoids phosphorus evaporation during annealing for temperatures up to 800 degrees C. Silicon doping is demonstrated, in particular, by grafting the POSS phosphorus triester on SiO2/Si wafers with optimized surface preparation (thin SiO2 layer of 0.7 nm) and annealing temperature (1000 degrees C), which provides phosphorus doses of similar to 7 x 10(12) P atoms cm(-2) in the silicon substrates together with a decrease of their sheet resistance. A detailed study of the surface chemistry on SiO2 nanoparticles used as a high-surface-area model yields the grafting mechanism and the structure of the surface species. We show that the POSS scaffold is conserved upon grafting, that its size controls the final P-surface density, and that it behaves as a self-protecting ligand against phosphorus volatilization during the annealing step. We thus demonstrate that the use of custom-made dopant precursors with self-capping properties is a promising approach to tune medium to low doping doses in technologically relevant semiconductors.