Concept
Ballistic conduction
Related publications (33)
Accurate Measurement of Dynamic ON-Resistance in GaN Transistors at Steady-State
Elison de Nazareth Matioli, Hongkeng Zhu
Accurate characterization of the dynamic ON-resistance (RON) degradation is important to predict conduction losses for gallium nitride high-electron-mobility transistors (GaN HEMTs). However, even for the same device, many inconsistent results of dynamic R ...
2023Defect formation and mitigation during laser powder bed fusion of copper
Additive manufacturing (AM) is a group of processing technologies which has the potential to revolutionize manufacturing by allowing easy manufacturing of complex shapes and small series. One AM-method which is of high interest for processing of metals is ...
EPFL2021Microscopic Detection Analysis of Single Molecules in MoS2 Membrane Nanopores
Aleksandra Radenovic, Michael Graf
A systematic microscopic analysis of the various resistive effects involved in the electronic detection of single biomolecules in a nanopore of a MoS2 nanoribbon is presented. The variations of the transverse electronic current along the two-dimensional (2 ...
2020Dynamical Coulomb Blockade as a Local Probe for Quantum Transport
Klaus Kern, Markus Etzkorn, Jacob Senkpiel
Quantum fluctuations are imprinted with valuable information about transport processes. Experimental access to this information is possible, but challenging. We introduce the dynamical Coulomb blockade (DCB) as a local probe for fluctuations in a scanning ...
2020Orbitally selective breakdown of Fermi liquid quasiparticles in Ca1.8Sr0.2RuO4
Marco Grioni, Johan Juul Chang, Gianmarco Gatti
We present a comprehensive angle-resolved photoemission spectroscopy study of Ca1.8Sr0.2RuO4. Four distinct bands are revealed and along the Ru-O bond direction their orbital characters are identified through a light polarization analysis and comparison to ...
AMER PHYSICAL SOC2019Valley-Engineering Mobilities in Two-Dimensional Materials
Nicola Marzari, Giovanni Pizzi, Marco Gibertini, Davide Campi, Thibault Daniel Pierre Sohier
Two-dimensional materials are emerging as a promising platform for ultrathin channels in field-effect transistors. To this aim, novel high-mobility semiconductors need to be found or engineered. Although extrinsic mechanisms can in general be minimized by ...
AMER CHEMICAL SOC2019Edge-contacted graphene with slope engineering by stencil lithography
One approach to overcome the high contact resistance between 3D metals and 2D materials/heterostructures is employing edge contacts [1]. A low-resistance edge contact on boron nitride/graphene/boron nitride heterostructure using photolithography has been d ...
2018A Study on the Charge Carrier Transport of Passivating Contacts
Recently, the charge carrier transport mechanism of passivating contacts, which feature an ultra-thin oxide layer, has been investigated by studying temperature-dependent current-voltage (I-V) characteristics. The measurement revealed that tunneling is the ...
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2018Template-Assisted Scalable Nanowire Networks
Anna Fontcuberta i Morral, Lucas Güniat, Gözde Tütüncüoglu, Martin George Friedl, Heidi Andrea Potts, Wonjong Kim, Mahdi Zamani, Vladimir Dubrovskii, Sara Marti Sanchez
Topological qubits based on Majorana Fermions have the potential to revolutionize the emerging field of quantum computing by making information processing significantly more robust to decoherence. Nanowires are a promising medium for hosting these kinds of ...
2018