Publications related to Moore's law

Direct and catalyst-free growth of vertically-stacked graphene-based structures for enhanced drug sensing

Giovanni De Micheli, Sandro Carrara, Nima Aliakbarinodehi

In this work, a complete study is carried out for the optimised, direct and catalyst-free growth of vertically-stacked graphene-based structures targeting at improved performance drug monitoring. The nanostructures, ultimately forming a honeycomb network o ...

IEEE2019

Modeling of Total Ionizing Dose Degradation on 180-nm n-MOSFETs Using BSIM3

Nergiz Sahin Solmaz, Mustafa Berke Yelten, Sadik Ilik

This paper presents a modeling approach to simulate the impact of total ionizing dose (TID) degradation on low-power analog and mixed-signal circuits. The modeling approach has been performed on 180-nm n-type metal-oxide-semiconductor field-effect transist ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

Tri-gate technologies for high-performance power GaN devices

Jun Ma

GaN-based electronic devices have great potential for future power applications, thanks to their wide band-gap, high breakdown electric field, and high electron mobility. In addition, these devices can be integrated on large-size Si substrates and enable n ...

EPFL2019

Runaway electron modelling in the self-consistent core European Transport Simulator

Joan Decker, Gergely Papp

Relativistic runaway electrons are a major concern in tokamaks. Although significant theoretical development had been undertaken in recent decades, we still lack a self-consistent simulator that could simultaneously capture all aspects of this phenomenon. ...

IOP PUBLISHING LTD2019

Modeling Interface Charge Traps in Junctionless FETs, Including Temperature Effects

Jean-Michel Sallese, Farzan Jazaeri, Amin Rassekh

In this article, an analytical predictive model of interface charge traps in symmetric, long-channel double-gate, junctionless transistors (JLTs) is proposed based on a charge-based model. Interface charge traps arising from exposure to chemicals, high-ene ...

2019

Sub-Thermionic Scalable III-V Tunnel Field-Effect Transistors Integrated on Si (100)

Mihai Adrian Ionescu, Kirsten Emilie Moselund

We present scalable III-V heterojunction tunnel FETs fabricated using a Si CMOS-compatible FinFET process flow and integrated on Si (100) substrates. The tunneling junction is fabricated through self-aligned selective p(+) GaAsSb raised source epitaxial re ...

IEEE2019

High performance Fully-vertical GaN-on-Si power MOSFETs

Elison de Nazareth Matioli, Chao Liu

We report the first demonstration of fully-vertical power MOSFETs on 6.6-μm-thick GaN grown on a 6-inch Si substrate by metal-organic chemical vapor deposition (MOCVD). A robust fabrication method was developed based on a selective and local removal of the ...

IEEE2019

A Modular, Direct Time-of-Flight Depth Sensor in 45/65-nm 3-D-Stacked CMOS Technology

Edoardo Charbon, Myung Jae Lee, Preethi Padmanabhan, Augusto Ronchini Ximenes

This article introduces a modular, direct time-of-flight (TOF) depth sensor. Each module is digitally synthesized and features a 2

\times

(8

\times

8) single-photon avalanche diode (SPAD) pixel array, an edge-sensitive decision tree, a shared time-to ...

2019

1200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance

Elison de Nazareth Matioli, Jun Ma, Catherine Erine, Minghua Zhu, Kai Cheng

Here we report novel multi-channel AlGaN/GaN MOSHEMTs with high breakdown voltage (V BR ) and low ON-resistance (R ON ). The multi-channel structure was judiciously designed to yield a small sheet resistance (R s ) of 80 Ω/sq using only four 2DEG channels, ...

IEEE2019

1200 V Multi-Channel Power Devices with 2.8 Omega.mm ON-Resistance

Elison de Nazareth Matioli, Jun Ma, Catherine Erine, Minghua Zhu, Kai Cheng

Here we report novel multi-channel AlGaN/GaN MOSHEMTs with high breakdown voltage (V-BR) and low ON-resistance (R-ON). The multi-channel structure was judiciously designed to yield a small sheet resistance (R-s) of 80 Omega/sq using only four 2DEG channels ...

IEEE2019

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Direct and catalyst-free growth of vertically-stacked graphene-based structures for enhanced drug sensing

Modeling of Total Ionizing Dose Degradation on 180-nm n-MOSFETs Using BSIM3

Tri-gate technologies for high-performance power GaN devices

Runaway electron modelling in the self-consistent core European Transport Simulator

Modeling Interface Charge Traps in Junctionless FETs, Including Temperature Effects

Sub-Thermionic Scalable III-V Tunnel Field-Effect Transistors Integrated on Si (100)

High performance Fully-vertical GaN-on-Si power MOSFETs

A Modular, Direct Time-of-Flight Depth Sensor in 45/65-nm 3-D-Stacked CMOS Technology

1200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance

1200 V Multi-Channel Power Devices with 2.8 Omega.mm ON-Resistance

Sub-Thermionic Scalable III-V Tunnel Field-Effect Transistors Integrated on Si (100)

Runaway electron modelling in the self-consistent core European Transport Simulator

Tri-gate technologies for high-performance power GaN devices

Direct and catalyst-free growth of vertically-stacked graphene-based structures for enhanced drug sensing

Modeling Interface Charge Traps in Junctionless FETs, Including Temperature Effects

Modeling of Total Ionizing Dose Degradation on 180-nm n-MOSFETs Using BSIM3

1200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance

A Modular, Direct Time-of-Flight Depth Sensor in 45/65-nm 3-D-Stacked CMOS Technology

1200 V Multi-Channel Power Devices with 2.8 Omega.mm ON-Resistance

High performance Fully-vertical GaN-on-Si power MOSFETs