Publications associées à Loi de Moore

Chattez avec Graph Search

Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.

AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.

A Modular, Direct Time-of-Flight Depth Sensor in 45/65-nm 3-D-Stacked CMOS Technology

Edoardo Charbon, Myung Jae Lee, Preethi Padmanabhan, Augusto Ronchini Ximenes

This article introduces a modular, direct time-of-flight (TOF) depth sensor. Each module is digitally synthesized and features a 2

\times

\times

8) single-photon avalanche diode (SPAD) pixel array, an edge-sensitive decision tree, a shared time-to ...

2019

Loi de Moore

Graph Chatbot

Chattez avec Graph Search

Direct and catalyst-free growth of vertically-stacked graphene-based structures for enhanced drug sensing

Modeling of Total Ionizing Dose Degradation on 180-nm n-MOSFETs Using BSIM3

Tri-gate technologies for high-performance power GaN devices

Runaway electron modelling in the self-consistent core European Transport Simulator

Modeling Interface Charge Traps in Junctionless FETs, Including Temperature Effects

Sub-Thermionic Scalable III-V Tunnel Field-Effect Transistors Integrated on Si (100)

High performance Fully-vertical GaN-on-Si power MOSFETs

A Modular, Direct Time-of-Flight Depth Sensor in 45/65-nm 3-D-Stacked CMOS Technology

1200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance

1200 V Multi-Channel Power Devices with 2.8 Omega.mm ON-Resistance

Modeling of Total Ionizing Dose Degradation on 180-nm n-MOSFETs Using BSIM3

Tri-gate technologies for high-performance power GaN devices

Sub-Thermionic Scalable III-V Tunnel Field-Effect Transistors Integrated on Si (100)

1200 V Multi-Channel Power Devices with 2.8 Omega.mm ON-Resistance

Runaway electron modelling in the self-consistent core European Transport Simulator

Modeling Interface Charge Traps in Junctionless FETs, Including Temperature Effects

1200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance

Direct and catalyst-free growth of vertically-stacked graphene-based structures for enhanced drug sensing

High performance Fully-vertical GaN-on-Si power MOSFETs

A Modular, Direct Time-of-Flight Depth Sensor in 45/65-nm 3-D-Stacked CMOS Technology