Publications related to Contact resistance

High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Catherine Erine, Minghua Zhu

In this letter, we present normally-off GaN-on-Si MOSFETs based on the combination of tri-gate with a short barrier recess to yield a large positive threshold voltage (VTH) while maintaining a low specific on resistance (R ON,SP ) and high current density ...

2019

Contributions to the contact resistivity in fired tunnel-oxide passivating contacts for crystalline silicon solar cells

Christophe Ballif, Franz-Josef Haug, Andrea Ingenito, Sofia Libraro, Frank Meyer

We investigate the contact resistivity of p-type passivating contacts for silicon solar cells. Our contact structures are compatible with firing, a rapid annealing process similar to the one used for sintering of the screen-printed metallisation in solar c ...

2019

A Study on the Characteristics of Cu-Mn-Dy Alloy Resistive Thin Films

Ho-Yun Lee

Cu-Mn-Dy resistive thin films were prepared on glass and Al2O3 substrates, which was achieved by co-sputtering the Cu-Mn alloy and dysprosium targets. The effects of the addition of dysprosium on the electrical properties and microstructures of annealed Cu ...

2019

Double-gate field-effect-transistor based biosensor

Hoël Maxime Guérin

The present invention concerns a biosensor (1) comprising: a source element (13); a drain element (17); a semiconductor channel element between the source element (13) and the drain element (17) for forming an electrically conductive channel with adjustabl ...

2019

Annealing of Silicon Heterojunction Solar Cells: Interplay of Solar Cell and Indium Tin Oxide Properties

Christophe Ballif, Raphaël François Lemerle, Mathieu Gérard Boccard, Jan Haschke, Brahim Aissa

In this paper, we report the evolution of silicon heterojunction solar cell properties focusing, in particular, on the indium tin oxide (ITO) layers upon consecutive thermal annealing. We find that the charge carrier density

N_{\rm e}

of the ITO increase ...

2019

Resistive Coupled VO2 Oscillators for Image Recognition

Mihai Adrian Ionescu, Igor Stolichnov, Kirsten Emilie Moselund, Siegfried Karg, Elisabetta Corti

Oscillator networks are known for their interesting collective behavior such as frequency locking, phase locking, and synchronization. Compared to other artificial neural network implementations, timing rather than amplitude information is used for computa ...

IEEE2019

Impact of Fin Width on Tri-Gate GaN MOSHEMTs

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Giovanni Santoruvo, Taifang Wang

In this paper, we present a detailed investigation of the impact of fin width (w(fin)) on tri-gate AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs). As w(fin) is reduced, the threshold voltage (V-TH) increases, which is due ...

2019

Analog Control of Retainable Resistance Multistates in HfO2 Resistive-Switching Random Access Memories (ReRAMs)

Elmira Shahrabi, Yusuf Leblebici, Jury Sandrini, Carlo Ricciardi, Cecilia Giovinazzo, Oguz Tolga Celik

Resistive-switching random access memory (ReRAM) technologies are nowadays a good candidate to overcome the bottleneck of Von Neumann architectures, taking advantage of their logic-in-memory capability and the ability to mimic biological synapse behavior. ...

AMER CHEMICAL SOC2019

1200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance

Elison de Nazareth Matioli, Jun Ma, Catherine Erine, Minghua Zhu, Kai Cheng

Here we report novel multi-channel AlGaN/GaN MOSHEMTs with high breakdown voltage (V BR ) and low ON-resistance (R ON ). The multi-channel structure was judiciously designed to yield a small sheet resistance (R s ) of 80 Ω/sq using only four 2DEG channels, ...

IEEE2019

1200 V Multi-Channel Power Devices with 2.8 Omega.mm ON-Resistance

Elison de Nazareth Matioli, Jun Ma, Catherine Erine, Minghua Zhu, Kai Cheng

Here we report novel multi-channel AlGaN/GaN MOSHEMTs with high breakdown voltage (V-BR) and low ON-resistance (R-ON). The multi-channel structure was judiciously designed to yield a small sheet resistance (R-s) of 80 Omega/sq using only four 2DEG channels ...

IEEE2019

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High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance

Contributions to the contact resistivity in fired tunnel-oxide passivating contacts for crystalline silicon solar cells

A Study on the Characteristics of Cu-Mn-Dy Alloy Resistive Thin Films

Double-gate field-effect-transistor based biosensor

Annealing of Silicon Heterojunction Solar Cells: Interplay of Solar Cell and Indium Tin Oxide Properties

Resistive Coupled VO2 Oscillators for Image Recognition

Impact of Fin Width on Tri-Gate GaN MOSHEMTs

Analog Control of Retainable Resistance Multistates in HfO2 Resistive-Switching Random Access Memories (ReRAMs)

1200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance

1200 V Multi-Channel Power Devices with 2.8 Omega.mm ON-Resistance

A Study on the Characteristics of Cu-Mn-Dy Alloy Resistive Thin Films

Double-gate field-effect-transistor based biosensor

Contributions to the contact resistivity in fired tunnel-oxide passivating contacts for crystalline silicon solar cells

Analog Control of Retainable Resistance Multistates in HfO2 Resistive-Switching Random Access Memories (ReRAMs)

Resistive Coupled VO2 Oscillators for Image Recognition

Annealing of Silicon Heterojunction Solar Cells: Interplay of Solar Cell and Indium Tin Oxide Properties

1200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance

Impact of Fin Width on Tri-Gate GaN MOSHEMTs

1200 V Multi-Channel Power Devices with 2.8 Omega.mm ON-Resistance

High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance