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Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN

Nicolas Grandjean, Denis Martin, Hironori Okumura

Mg-doped GaN with a net acceptor concentration (NA-ND) in the high 10 19 cm(-3) range was grown using ammonia molecular-beam epitaxy. Electrical properties of NiO contact on this heavily doped p-type GaN were investigated. A potential-barrier height of 0.2 ...

Amer Inst Physics2016

Principle and modelling of Transient Current Technique for interface traps characterization in monolithic pixel detectors obtained by CMOS-compatible wafer bonding

Jean-Michel Sallese, Alessandro Mapelli

In the framework of monolithic silicon radiation detectors, a fabrication process based on a recently developed silicon wafer bonding technique at low temperature was proposed. Ideally, this new process would enable direct bonding of a read-out electronic ...

Institute of Physics2016

Frequency-comb-assisted broadband precision spectroscopy with cascaded diode lasers

Tobias Kippenberg, Victor Brasch, Michael Wolfgang Geiselmann, Junqiu Liu, Hairun Guo, Martin Hubert Peter Pfeiffer, Arne Kordts

Frequency-comb-assisted diode laser spectroscopy, employing both the accuracy of an optical frequency comb and the broad wavelength tuning range of a tunable diode laser, has been widely used in many applications. In this Letter, we present a novel method ...

Optical Society of America2016

Phase and frequency self-configurable efficient low voltage harvester for zero power wearable devices

Pierre-André Farine, Alexis Boegli, Milad Ataei Ashtiani

This paper describes a converter which configures itself to increase power transfer and decrease losses. The system controls its three timing variables by three loops in a stable manner. A time domain state-space averaging model is used to design the syste ...

Ieee2016

Charge-Based Modeling of Double-Gate and Nanowire Junctionless FETs Including Interface-Trapped Charges

Jean-Michel Sallese, Farzan Jazaeri, Ashkhen Yesayan

Nanowire (NW) semiconductors are interesting devices for being used as sensors. Such NWs are doped silicon channels with electrical contacts at both ends, which is a kind of the so-called junctionless (JL) device. However, in contrast with the state-of-the ...

Institute of Electrical and Electronics Engineers2016

Doping Evolution and Junction Formation in Stacked Cyanine Dye Light-Emitting Electrochemical Cells

Roland Hany, Lei Wang, Beat Ruhstaller, Matia Bulloni

Cyanine dyes are fluorescent organic salts with intrinsic conductivity for ionic and electronic charges. Recently (J. Am. Chem. Soc. 2013, 135, 18008-18011), these features have been exploited in cyanine light-emitting electrochemical cells (LECs). Here, w ...

Amer Chemical Soc2016

Excitonic Diffusion in InGaN/GaN Core–Shell Nanowires

Hua Zhang, Jean-Daniel Ganière, Gwénolé Jean Jacopin, Mehran Shahmohammadi

We report on the direct observation of the diffusion of carriers in graded InGaN/GaN quantum wells in a nanowire. By probing the local dynamics at the nanoscale, along the wire for different temperatures between 4 and 250 K, we conclude that this diffusion ...

American Chemical Society2016

Light-induced performance increase of silicon heterojunction solar cells

Christophe Ballif, Antoine Descoeudres, Jacques Levrat, Gabriel Christmann, Matthieu Despeisse, Stefaan De Wolf, Sylvain Nicolay, Eiji Kobayashi

Silicon heterojunction solar cells consist of crystalline silicon (c-Si) wafers coated with doped/intrinsic hydrogenated amorphous silicon (a-Si:H) bilayers for passivating-contact formation. Here, we unambiguously demonstrate that carrier injection either ...

American Institute of Physics2016

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Diode

III-V Nanowire Hetero-junction Tunnel FETs integrated on Si

Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN

Principle and modelling of Transient Current Technique for interface traps characterization in monolithic pixel detectors obtained by CMOS-compatible wafer bonding

Frequency-comb-assisted broadband precision spectroscopy with cascaded diode lasers

Phase and frequency self-configurable efficient low voltage harvester for zero power wearable devices

Charge-Based Modeling of Double-Gate and Nanowire Junctionless FETs Including Interface-Trapped Charges

Doping Evolution and Junction Formation in Stacked Cyanine Dye Light-Emitting Electrochemical Cells

Excitonic Diffusion in InGaN/GaN Core–Shell Nanowires

Calcium impurity as a source of non-radiative recombination in (In,Ga)N layers grown by molecular beam epitaxy

Light-induced performance increase of silicon heterojunction solar cells

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Chat with Graph Search

Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN

Principle and modelling of Transient Current Technique for interface traps characterization in monolithic pixel detectors obtained by CMOS-compatible wafer bonding

Calcium impurity as a source of non-radiative recombination in (In,Ga)N layers grown by molecular beam epitaxy

III-V Nanowire Hetero-junction Tunnel FETs integrated on Si

Doping Evolution and Junction Formation in Stacked Cyanine Dye Light-Emitting Electrochemical Cells

Light-induced performance increase of silicon heterojunction solar cells

Phase and frequency self-configurable efficient low voltage harvester for zero power wearable devices

Frequency-comb-assisted broadband precision spectroscopy with cascaded diode lasers

Charge-Based Modeling of Double-Gate and Nanowire Junctionless FETs Including Interface-Trapped Charges

Excitonic Diffusion in InGaN/GaN Core–Shell Nanowires