Concept

Diode

Related publications (449)

Ten years of biophotonics single-photon SPAD imager applications: retrospective and outlook, Multiphoton Microscopy in the Biomedical Sciences XVII

Edoardo Charbon, Claudio Bruschini, Harald Arjan Robert Homulle

SPAD (single-photon avalanche diode) arrays are single-photon imagers that can provide unparalleled timeresolved sensing performance. Since their inception in standard CMOS technologies (2003), a host of architectures and target applications have been expl ...

2017

Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy

Nicolas Grandjean, Marco Malinverni, Denis Martin, Hironori Okumura

We grew heavily Mg-doped GaN using ammonia molecular-beam epitaxy. The use of low growth temperature (740 degrees C) allows decreasing the incorporation of donor-like defects (

Amer Inst Physics2016

Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures

Anna Fontcuberta i Morral, Sonia Conesa Boj, Heidi Andrea Potts

In this letter, we demonstrate the formation of unique Ga/GaAs/Si nanowire heterostructures, which were successfully implemented in nanoscale light-emitting devices with visible room temperature electroluminescence. Based on our recent approach for the int ...

American Chemical Society2016

Enhanced Electrical Performance and Heat Dissipation in AlGaN/GaN Schottky Barrier Diodes Using Hybrid Tri-anode Structure

Elison de Nazareth Matioli, Jun Ma, Giovanni Santoruvo, Pulkit Tandon

Enhanced performance in AlGaN/GaN Schottky barrier diodes (SBDs) is investigated using a nanowire hybrid tri-anode structure that integrates 3-D Schottky junctions with tri-gate transistors. The fabricated SBDs presented an increased output current density ...

Institute of Electrical and Electronics Engineers2016

Avalanche Microwave Noise Sources in Commercial 90-nm CMOS Technology

Christian Enz, Pierre-André Farine, Cyril Botteron, Gabriele Tasselli

This paper presents a microwave noise source implemented in a commercial CMOS technology. The circuit is based on the avalanche noise generated by both the source-to-bulk and the drain-to-bulk junctions in reverse breakdown. Two sources of different juncti ...

Institute of Electrical and Electronics Engineers2016

Input-Series and Output-Series High Voltage Converter with Active Balancing Circuit for N-1 Operation

Alfred Rufer, Tiago Alexandre Nabais Lima

An input-series/output-series converter dedicated to high power applications is presented. The converter is composed of plural MF transformers based on DC-DC sub-converters. The series connection allows reaching input-voltage levels in the range of several ...

Ieee2016

High-Voltage Tolerant Bi-State Self-Biasing Output Driver using Cascade Complementary Latches in Twin-well CMOS Technology

Scott Anthony Lindner

The design of a bi-state output buffer that can handle 5 times the supply voltage is presented. The use of self-biasing stacked devices driven by a cascade of complementary latches allows all devices to operate within the limits set by the technology, thus ...

Ieee2016

Remotely powered PPM demodulator by inductive coupling for rodent applications

Catherine Dehollain, Enver Gürhan Kilinç, Kerim Türe, Franco Maloberti

A low-power pulse position modulation (PPM) demodulator has been developed for remotely powered batteryless implantable devices. The required power for the implantable device is provided by the magnetic coupling with the external array of powering of coils ...

Springer Verlag2016

CMOS-Compatible PureGaB Ge-on-Si APD Pixel Arrays

Edoardo Charbon, Mahdi Aminian

Pure gallium and pure boron (PureGaB) Ge-on-Si photodiodes were fabricated in a CMOS compatible process and operated in linear and avalanche mode. Three different pixel geometries with very different area-to-perimeter ratios were investigated in linear arr ...

Ieee-Inst Electrical Electronics Engineers Inc2016

Electronic transport properties of vertical and lateral graphene-based heterostructures

Roberto Urcuyo Solorzano

Graphene has some drawbacks, like the absence of an electronic band gap which leads to only small gate switching ratios, and its fast carrier recombination that limits its use in optoelectronics. In order to overcome these issues, the aim of this thesis wa ...

EPFL2016

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