Concept

Thermal oxidation

Related publications (152)

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Nature Portfolio2024

Growth and Doping Mechanisms of III-V Nanostructures by Selective Area Epitaxy

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Selective area epitaxy (SAE), applied to semiconductor growth, allows tailored fabrication of intricate structures at the nanoscale with enhanced properties and functionalities. In the field of nanowires (NWs), it adds scalability by enabling the fabricati ...

EPFL2024

We provide comprehensive experimental data and technology computer-aided design (TCAD) simulations to clarify total-ionizing-dose mechanisms in 16-nm Si FinFETs. In n-channel FinFETs irradiated to ultrahigh doses, the transconductance evolution rebounds (i ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Colloidal Atomic Layer Deposition on Nanocrystals Using Ligand-Modified Precursors

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Atomic layer deposition (ALD) is a method to grow thin metal oxide layers on a variety of materials for applications spanning from electronics to catalysis. Extending ALD to colloidally stable nanocrystals promises to combine the benefits of thin metal oxi ...

Amer Chemical Soc2024

Understanding and mitigating resistive losses in fired passivating contacts: role of the interfaces and optimization of the thermal budget

Christophe Ballif, Franz-Josef Haug, Aïcha Hessler-Wyser, Audrey Marie Isabelle Morisset, Julien Hurni, Ezgi Genç, Luca Massimiliano Antognini, Sofia Libraro

This work presents a study of p-type passivating contacts based on SiCx formed via a rapid thermal processing (RTP) step, using conditions compatible with the firing used to sinter screen-printed metallization pastes in industry. The contributions of the t ...

Amsterdam2023

Revealing cation and metal gradients in and underneath passive films of the stainless steel 1.4652 in acidic and alkaline electrolytes with angular resolved dual energy X-ray photo-electron spectroscopy

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Passive films on the superaustenitic stainless steel 1.4652 were studied using angular resolved hard X-ray photo-electron spectroscopy (HAXPES), which provides an increased information depth compared to conventional X-ray photo-electron spectroscopy (XPS). ...

Hoboken2023

, , ,

GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

AMER PHYSICAL SOC2023

Quantum state-resolved methane scattering from Ni(111) and NiO(111) by bolometer infrared laser tagging: The effect of surface oxidation

Rainer Beck, Christopher Scott Reilly, Bo-Jung Chen, Patrick Floss

We describe a novel UHV state-to-state molecule/surface scattering apparatus with quan- tum state preparation of the incident molecular beam and angle-resolved quantum state detection of the scattered molecules. State resolved detection is accomplished usi ...

2023

During this project, the microfabrication of Hafnium Carbide (HfC) was investigated. Multiple tools were considered and tested for their compatibility and effectiveness when working with HfC. The main method of choice for the machining of HfC thin films wa ...

2023

22.8% full-area bifacial n-PERT solar cells with rear side sputtered poly-Si (n) passivating contact

Christophe Ballif, Andrea Ingenito, Bertrand Yves Paul Paviet-Salomon, Sylvain Nicolay, Sofia Libraro

High-temperature compatible passivating contacts based on phosphorus doped polysilicon (poly-Si(n)) on a thin silicon oxide, employed on the rear side of bifacial n-PERT like solar cells provide an efficiency increase while being compatible with current ph ...

ELSEVIER2023

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