Second order effects: Body Effect and Channel-Length Modulation

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Covers the MOS I/V characteristics, including triode and saturation regions, deep triode, and second-order effects.

Covers the EKV MOS Transistor Model, focusing on the charge-based model and its applications.

Covers abstraction levels, EPFL design flow, lowerbounds, and layout recommendations.

Explores the Body Effect, Channel-Length Modulation, and Subthreshold Conduction in MOSFETs, crucial for circuit design.

Simplifies MOS device analysis with the small-signal model, including body effect.

Introduces the PN junction, BJT operation modes, and MOS transistor basics.

Covers the fundamentals of static logic, including noise immunity, noise margins, and various logic gate designs.

Explains the operation of NMOS structures and their behavior in various regimes, including sub-threshold, linear, and saturation.

Provides an overview of MOSFET operation, focusing on NMOS and PMOS characteristics, including current equations and channel modulation effects.

Revisits the modeling of the MOS transistor for low-voltage and low-power analog circuit design, focusing on the EKV charge-based model.