Elyahou Kapon, Alok Rudra, Benjamin Dwir, Pascal Gallo, Jérôme Faist, Marco Felici, Arun Mohan
We demonstrate engineering of carrier states in the conduction band (CB) and valence band (VB) of site-controlled InGaAs/GaAs quantum dots (QDs) grown into pyramidal recesses, by controlling their shape, size, and composition. QDs with CB level separation ...
2011