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Mg doping for p-type AlInN lattice-matched to GaN

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Today's world depends on optoelectronic devices: light-emitting diodes illuminate our houses and backlight the displays on our gadgets, while laser diodes underpin fibre-optic communication. Such optoelectronic devices rely on crystalline semiconductor het ...

EPFL2023

Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

Elison de Nazareth Matioli, Luca Nela, Catherine Erine, Amirmohammad Miran Zadeh

Super junctions (SJs) have enabled unprecedented performance in Silicon power devices, which could be further improved by applying this concept to wide bandgap semiconductors like gallium nitride (GaN). Currently, polarization super junctions (PSJs) are th ...

2022

Broadband electrostatic force microscopy can be used to non-destructively image n-type and p-type dopant layers in silicon devices with a lateral resolution of 10 nm and a vertical resolution of 0.5 nm. Integrated circuits and certain silicon-based quantum ...

NATURE PUBLISHING GROUP2020

Organic semiconductor materials have been widely applied in optoelectronic devices to replace their inorganic counterparts and explore new fields of applications. Due to their high extinction coefficients, chemical tunability and solubility, cyanine dyes a ...

EPFL2017

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Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of mate ...

2017

Many practical applications among organic electronic devices have been demonstrated over the last decades. They are considered as promising alternatives to inorganic semiconductor technologies due to the potential of cost-effective fabrication, excellent p ...

EPFL2017

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We grew heavily Mg-doped GaN using ammonia molecular-beam epitaxy. The use of low growth temperature (740 degrees C) allows decreasing the incorporation of donor-like defects (

Amer Inst Physics2016

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Cyanine dyes are fluorescent organic salts with intrinsic conductivity for ionic and electronic charges. Recently (J. Am. Chem. Soc. 2013, 135, 18008-18011), these features have been exploited in cyanine light-emitting electrochemical cells (LECs). Here, w ...

Amer Chemical Soc2016

Ferroelectric oxides, such as lead zirconate titanate, have proved invaluable due to their excellent dielectric and piezoelectric properties. These classes of materials possess a large electric polarization below the Curie temperature. Regions of the cryst ...

EPFL2016

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Vacancy-type defects in Mg-doped GaN were probed using a monoenergetic positron beam. GaN films with a thickness of 0.5-0.7 mu m were grown on GaN/sapphire templates using ammonia-based molecular beam epitaxy and characterized by measuring Doppler broadeni ...

Amer Inst Physics2016