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In this work, highly scaled FinFETs (Fin Field Effect Transistors) are proposed as both sensing and circuit units of a lab-on-a-chip platform. The FinFET-based sensors with an HfO2 gate oxide demonstrate full pH-response with ΔVth ≈ 56 mV/pH. High readout sensitivity Sout = ΔId/Id ≈ 43% is achieved in combination with excellent device electronic properties, i.e. SS = 77 mV/dec and Ion/Ioff =1.5×10^6. High long-term stability is proven over 4.5 days with a drift in time limited at 0.14 mV/h.
Mihai Adrian Ionescu, Kirsten Emilie Moselund, Clarissa Convertino
Elison de Nazareth Matioli, Luca Nela, Taifang Wang
Jürgen Brugger, Giovanni Boero, Xia Liu, Ana Conde Rubio