Built-in self-testA built-in self-test (BIST) or built-in test (BIT) is a mechanism that permits a machine to test itself. Engineers design BISTs to meet requirements such as: high reliability lower repair cycle times or constraints such as: limited technician accessibility cost of testing during manufacture The main purpose of BIST is to reduce the complexity, and thereby decrease the cost and reduce reliance upon external (pattern-programmed) test equipment.
Active-pixel sensorAn active-pixel sensor (APS) is an , which was invented by Peter J.W. Noble in 1968, where each pixel sensor unit cell has a photodetector (typically a pinned photodiode) and one or more active transistors. In a metal–oxide–semiconductor (MOS) active-pixel sensor, MOS field-effect transistors (MOSFETs) are used as amplifiers. There are different types of APS, including the early NMOS APS and the now much more common complementary MOS (CMOS) APS, also known as the CMOS sensor.
Standard cellIn semiconductor design, standard-cell methodology is a method of designing application-specific integrated circuits (ASICs) with mostly digital-logic features. Standard-cell methodology is an example of design abstraction, whereby a low-level very-large-scale integration (VLSI) layout is encapsulated into an abstract logic representation (such as a NAND gate). Cell-based methodology – the general class to which standard cells belong – makes it possible for one designer to focus on the high-level (logical function) aspect of digital design, while another designer focuses on the implementation (physical) aspect.
Multigate deviceA multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET).
Hard disk drive performance characteristicsHigher performance in hard disk drives comes from devices which have better performance characteristics. These performance characteristics can be grouped into two categories: access time and data transfer time (or rate). The access time or response time of a rotating drive is a measure of the time it takes before the drive can actually transfer data. The factors that control this time on a rotating drive are mostly related to the mechanical nature of the rotating disks and moving heads.
65 nm processThe 65 nm process is an advanced lithographic node used in volume CMOS (MOSFET) semiconductor fabrication. Printed linewidths (i.e. transistor gate lengths) can reach as low as 25 nm on a nominally 65 nm process, while the pitch between two lines may be greater than 130 nm. For comparison, cellular ribosomes are about 20 nm end-to-end. A crystal of bulk silicon has a lattice constant of 0.543 nm, so such transistors are on the order of 100 atoms across. By September 2007, Intel, AMD, IBM, UMC and Chartered were also producing 65 nm chips.
Power semiconductor deviceA power semiconductor device is a semiconductor device used as a switch or rectifier in power electronics (for example in a switch-mode power supply). Such a device is also called a power device or, when used in an integrated circuit, a power IC. A power semiconductor device is usually used in "commutation mode" (i.e., it is either on or off), and therefore has a design optimized for such usage; it should usually not be used in linear operation. Linear power circuits are widespread as voltage regulators, audio amplifiers, and radio frequency amplifiers.
Transistor countThe transistor count is the number of transistors in an electronic device (typically on a single substrate or "chip"). It is the most common measure of integrated circuit complexity (although the majority of transistors in modern microprocessors are contained in the cache memories, which consist mostly of the same memory cell circuits replicated many times). The rate at which MOS transistor counts have increased generally follows Moore's law, which observed that the transistor count doubles approximately every two years.
ISFETAn ion-sensitive field-effect transistor (ISFET) is a field-effect transistor used for measuring ion concentrations in solution; when the ion concentration (such as H+, see pH scale) changes, the current through the transistor will change accordingly. Here, the solution is used as the gate electrode. A voltage between substrate and oxide surfaces arises due to an ion sheath. It is a special type of MOSFET (metal–oxide–semiconductor field-effect transistor), and shares the same basic structure, but with the metal gate replaced by an ion-sensitive membrane, electrolyte solution and reference electrode.
Scanning tunneling microscopeA scanning tunneling microscope (STM) is a type of microscope used for imaging surfaces at the atomic level. Its development in 1981 earned its inventors, Gerd Binnig and Heinrich Rohrer, then at IBM Zürich, the Nobel Prize in Physics in 1986. STM senses the surface by using an extremely sharp conducting tip that can distinguish features smaller than 0.1 nm with a 0.01 nm (10 pm) depth resolution. This means that individual atoms can routinely be imaged and manipulated.
