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Characterization and Compact Modeling of Nanometer CMOS Transistors at Deep-Cryogenic Temperatures
Related publications (68)
Emulating Multimemristive Behavior of Silicon Nanowire-Based Biosensors by Using CMOS-Based Implementations
Sandro Carrara, Junrui Chen, Kapil Bhardwaj
The research presented in this article draws inspiration from previous efforts aimed at replicating the functions of various solid-state memristors using a variety of materials. The memristor circuit emulator serves as a cost-effective tool for circuit des ...
Ieee-Inst Electrical Electronics Engineers Inc2024Design and manufacture of edible microfluidic logic gates
Dario Floreano, Bokeon Kwak, Shuhang Zhang
Edible robotics is an emerging research field with potential use in environmental, food, and medical scenarios. In this context, the design of edible control circuits could increase the behavioral complexity of edible robots and reduce their dependence on ...
IEEE2023Static and Dynamic Stochastic Analysis of a Temperature-Sensitive VO2 Spiking Neuron
Mihai Adrian Ionescu, Teodor Rosca
In this work, we investigate the intrinsic cycle-to-cycle variations in a spiking temperature-sensitive neuron, based on the resistive switching of a Vanadium dioxide (VO2) two-terminal device. We study how this phenomenon impacts the spike rate jitter, an ...
New York20233D Smith chart constant quality factor semi-circles contours for positive and negative resistance circuits
Mihai Adrian Ionescu, Andrei Müller
The article firstly proves that the constant quality factor (Q) contours for passive circuits, while represented on a 2D Smith chart, form circle arcs on a coaxal circle family. Furthermore, these circle arcs represent semi-circles families in the north he ...
2020Approximate Kron Reduction Methods for Electrical Networks With Applications to Plug-and-Play Control of AC Islanded Microgrids
Giancarlo Ferrari Trecate, Alessandro Floriduz, Michele Tucci
Kron reduction (KR) is a methodology for analyzing an electrical network by replacing it with a simpler circuit having less nodes but the same terminal behavior of voltages and currents at target vertices. Existing approaches to instantaneous KR, however, ...
2019Polarity-Controllable Devices and Circuits for Doping-Free 2D Electronics
The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâs la ...
EPFL2019A 6.5-GHz Cryogenic All-Pass Filter Circulator in 40-nm CMOS for Quantum Computing Applications
Edoardo Charbon, Andrea Ruffino, Yatao Peng, Fabio Sebastiano
Cryogenic solid-state quantum processors require classical control and readout electronics; to achieve compactness and scalability, cryogenic integrated circuits have been recently proposed for this goal. Circulators are widely used in readout circuits, ho ...
2019Charge-Based Distortion Analysis of Nanoscale MOSFETs
Christian Enz, Alessandro Pezzotta, Francesco Chicco
This paper presents a study of MOSFETs' linearity, exploiting a simplified version of the charge-based EKV model. It allows to deduce analytically the one-tone and two-tone harmonic distortions introduced by the nonlinear ID-VG MOSFET characteristic as a f ...
2018Structure-Preserving Model-Reduction of Dissipative Hamiltonian Systems
Jan Sickmann Hesthaven, Babak Maboudi Afkham
Reduced basis methods are popular for approximately solving large and complex systems of dierential equations. However, conventional reduced basis methods do not generally preserve conservation laws and symmetries of the full order model. Here, we present ...
2017Multi-analysis and modeling of asymmetry offset for Hall effect structures
The topological (asymmetry) offset voltage of CMOS cross-like Hall cells is analyzed in this paper. In order to attain the stated objective, different approaches have been considered. Both circuit and three-dimensional models have been developed. Variation ...
Elsevier Science Bv2017