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P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors

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Polarity-Controllable Devices and Circuits for Doping-Free 2D Electronics

Giovanni Vincenzo Resta

The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâs la ...

EPFL2019

High-performance nanowire-based E-mode Power GaN MOSHEMTs

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Minghua Zhu

In this work, we demonstrate high-performance Enhancement-mode (E-mode) GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors (MOS-HEMTs) on Si substrate achieved by a nanostructured gate region in combination with a large work-function gate met ...

IEEE2019

Impact of Fin Width on Tri-Gate GaN MOSHEMTs

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Giovanni Santoruvo, Taifang Wang

In this paper, we present a detailed investigation of the impact of fin width (w(fin)) on tri-gate AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs). As w(fin) is reduced, the threshold voltage (V-TH) increases, which is due ...

2019

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In this work we report the fabrication, co-integration and resulting performance of 2D/2D van der Waals (vdW) Vertical p-type Tunnel FETs and p-MOSFETs in a WSe2/SnSe2 material system. We demonstrate the best ever reported combined performance in terms of ...

IEEE2019

1200 V Multi-Channel Power Devices with 2.8 Omega.mm ON-Resistance

Elison de Nazareth Matioli, Jun Ma, Catherine Erine, Minghua Zhu, Kai Cheng

Here we report novel multi-channel AlGaN/GaN MOSHEMTs with high breakdown voltage (V-BR) and low ON-resistance (R-ON). The multi-channel structure was judiciously designed to yield a small sheet resistance (R-s) of 80 Omega/sq using only four 2DEG channels ...

IEEE2019

Charge-Based EPFL HEMT Model

Jean-Michel Sallese, Farzan Jazaeri

This paper presents a design-oriented charge-based model for dc operation of AlGaAs/GaAs and AlGaN/GaN-based high-mobility field-effect transistors. The intrinsic model is physics-based and does not introduce any empirical parameter. The central concept is ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

Double-gate field-effect-transistor based biosensor

Hoël Maxime Guérin

The present invention concerns a biosensor (1) comprising: a source element (13); a drain element (17); a semiconductor channel element between the source element (13) and the drain element (17) for forming an electrically conductive channel with adjustabl ...

2019

This paper investigates energy filtering in silicon nanowires and nanosheets by resonant electron tunneling through a geometric superlattice. A geometric superlattice is any kind of periodic geometric feature along the transport direction of the nanowire o ...

AMER INST PHYSICS2018

Characterization and Modeling of Gigarad-TID-Induced Drain Leakage Current of 28-nm Bulk MOSFETs

Christian Enz, Farzan Jazaeri, Chunmin Zhang, Federico Faccio

This paper characterizes and models the effects of total ionizing dose (TID) up to 1 Grad(SiO2) on the drain leakage current of nMOSFETs fabricated with a commercial 28-nm bulk CMOS process. Experimental comparisons among individual nMOSFETs of various siz ...

2018

Slanted Tri-gates for High-Voltage GaN Power Devices

Elison de Nazareth Matioli, Jun Ma

In this letter, we introduce and demonstrate the concept of slanted tri-gates to enhance the breakdown voltage (V-BR) in lateral GaN power devices. Conventionally, field plates (FPs) are used to enhance the V-BR by distributing more homogeneously the elect ...

Institute of Electrical and Electronics Engineers2017