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Charge-based modeling of ultra narrow junctionless cylindrical nanowire FETs

Related publications (32)

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This article outlines the advancements made in broadening the application scope of the OpenMC neutron transport code to include thermohydraulic coupling and nuclear data uncertainty propagation. These developments primarily involve the incorporation of the ...

Taylor & Francis Inc2024

A geometric optimal control approach for imitation and generalization of manipulation skills

Sylvain Calinon, Amirreza Razmjoo Fard, Jie Zhao

Daily manipulation tasks are characterized by regular features associated with the task structure, which can be described by multiple geometric primitives related to actions and object shapes. Only using Cartesian coordinate systems cannot fully represent ...

ELSEVIER2023

With the current trend of increasing complexity of industrial systems, the construction and monitoring of health indicators becomes even more challenging. Given that health indicators are commonly employed to predict the end of life, a crucial criterion fo ...

Research Publishing2023

In this work, we propose an analytical model for the intrinsic transcapacitances in ultra-thin gate-all-around junctionless nanowire field effect transistors in the presence of confined energy states of electrons. The validity of the developed model is con ...

PERGAMON-ELSEVIER SCIENCE LTD2023

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In this brief, extraction methods are proposed for determining the essential parameters of double gate junction field-effect transistors (FETs). First, a novel method for determining free carrier effective mobility, similar to a recently proposed method fo ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

A framework to automate the design of digitally-fabricated timber plate structures

Yves Weinand, Petras Vestartas, Nicolas Henry Pierre Louis Rogeau, Aryan Rezaei Rad, Henry V. Burton

The current study uses knowledge from digital architecture, computer science, engineering informatics, and structural engineering to formulate an algorithmic framework for integrated Computer-Aided Design (CAD) and Computer-Aided Engineering (CAE) of Integ ...

2020

In this article, we present a closed-form solution for transcapacitances in GaN HEMTs derived from a design-oriented charge-based model of the AlGaAs/GaAs- and AlGaN/GaN-based HEMTs that were recently proposed. The analytical expressions are based on the c ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

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Trimming is a common operation in computer aided design and, in its simplest formulation, consists in removing superfluous parts from a geometric entity described via splines (a spline patch). After trimming, the geometric description of the patch remains ...

2020

Ultrathin Junctionless Nanowire FET Model, Including 2-D Quantum Confinements

Farzan Jazaeri

In this paper, we develop an explicit model to predict the dc electrical behavior in ultrathin surrounding gate junctionless (JL) nanowire field-effect transistors (FETs). The proposed model considers 2-D electrical and geometrical confinements of carrier ...

2019

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In this work we propose an Uncertainty Quantification methodology for sedimentary basins evolution under mechanical and geochemical compaction processes, which we model as a coupled, time-dependent, non-linear, monodimensional (depth-only) system of PDEs w ...

Elsevier2018