Lithographie

Résumé

thumb|Affiche pour une exposition consacrée au centenaire de la lithographie par Pierre Puvis de Chavannes, 1895. La lithographie (du grec lithos, « pierre » et graphein, « écrire ») est une technique d’impression qui permet la création et la reproduction à de multiples exemplaires d’un tracé exécuté à l’encre ou au crayon sur une pierre calcaire. Inventée par Aloys Senefelder, à partir de 1796, en Allemagne, elle a été définitivement mise au point dans les premières années du . Lithogravure et microlithographie La lithographie ne doit pas être confondue avec la lithogravure, car celle-ci consiste à graver en creux (ou en relief) des plaques de pierre et est relativement peu utilisée pour produire des estampes. C'est aussi un procédé photomécanique et chimique qui permet de réaliser des composants de micro-électronique : voir microlithographie. Sous l’influence de l’anglais, lithography, le mot « lithographie » est utilisé dans divers composés en rapport avec les micro-te

Source officielle

https://fr.wikipedia.org/wiki/Lithographie

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Dynamic Stencil Lithography

Recent developments are going towards miniaturized devices and structures. Besides advanced photolithography techniques, complementary patterning methods are evolving. Among them is the nanostencil technique. This technique is about defining patterns under vacuum by evaporation of metal through stencil apertures. Such a stencil can be used either in static or dynamic mode. The latter allows overcoming the limitations of static deposition and in particular offers the possibility to make custom defined structures, for example three dimensional and closed loop structures. The goal of this Master Project is to develop a setup that allows dynamic definition of micro- and nanometer sized structures by means of stencil lithography.

2006

Chargement

In this thesis, the wafer-scale fabrication of SiN membranes, Au films and Au membranes with arrays of sub-µm holes is described. Two conceptually different processes (1) and (2) were developed, both of which are based on nanosphere lithography (NSL) with self-assembled close-packed monolayers of polystyrene (PS) beads. PS beads with a diameter D in the range of 420 nm to 530 nm were used. The hole array periodicity p was thus determined by D. Different bead deposition methods were tested; by spin-coating, a monolayer wafer coverage > 90% could be obtained. By O2-RIE, D could be reduced in a controlled way down to 0.3D. In process (1), holes were etched into the device layer using a hole etch mask made by NSL. The hole size ⌀ was determined by the reduced D. In this way, 100 nm thick SiN membranes with a maximum size of 2400×2400 µm2 and a hole density on the order of 108 holes/cm2 were fabricated by etching holes into the SiN. The membrane release was done in a combined dry-/wet-etch procedure. Similarly, hole arrays were fabricated on 2" glass wafers by sputter-etching into 200 nm thick Au films. With this process, different ⌀, e.g. from 60 nm to 180 nm, could be obtained for initially identical mask holes by tuning the sputter-etch parameters. In process (2), NSL was used to realize high aspect ratio Si and oxidized Si pillars that were subsequently used as a lift-off template. Free-standing, 200 nm thick, 1200◊1200 µm2 large Au membranes with ⌀ from 100 nm to 300 nm were successfully fabricated using Si pillars as KOH lift-off template and a Si-DRIE release procedure. Using oxidized Si pillars for lift-off in HF instead, such hole arrays in Au films could be transferred to flexible, transparent parylene films. The fabricated devices were characterized and successfully tested for stencil and refractive index sensing applications: Holey SiN membranes were bulge-tested and withstood pressures up to 5 bar, showing their suitability for stencil and filtration applications. Stenciling was successfully done for (a) the deposition of arrays of 230 nm in diameter Au and Ag dots onto Si substrates and (b) the etching of holes into a 500 nm thick SiN membrane. The light transmission characteristics of wafer-scale hole arrays in Au films were reproducible for different measurement locations. Similar hole arrays were used to detect refractive index changes in water of varying glycerine concentrations. The transmission through Cr/Au membranes with sub-wavelength hole arrays was measured. Upon Cr removal, the transmission was enhanced by a factor 2.4.

EPFL2010

Chargement

SiN membranes with submicrometer hole arrays patterned by wafer-scale nanosphere lithography

Nicolas Blondiaux, Jürgen Brugger, Harry Heinzelmann, Mona Julia Katharina Klein, Franck Montagne, Raphaël Pugin, Andreea Veronica Savu, Oscar Vazquez Mena

In this work, nanosphere lithography was integrated with standard microfabrication for the wafer-scale fabrication of silicon nitride (SiN) membranes with arrays of submicrometer holes. A monolayer of polystyrene (PS) beads with a mean diameter of 428 or 535 nm was spin coated onto the front side of a (100)-silicon wafer double-side coated with 100 nm of low-stress SiN. The size of the deposited PS beads was reduced by oxygen plasma reactive ion etching. This allowed to tune the hole size in the released SiN membrane while maintaining the hole array periodicity. Using the size-reduced PS beads as a lift-off template in a standard nanosphere lithography lift-off procedure, a 20 nm thick chromium hole etch mask was realized. This hole mask was patterned by UV photolithography, thus allowing for the local dry-etching of holes into the SiN layer. The holey areas were released from the backside in a combined Si dry- and wet-etch process. During the final wet etch, the wafer front side was protected with a KOH-resistant polymeric coating (ProTEK®). In this way, holey SiN membranes with side lengths ranging from 400 um up to 2.4 mm were fabricated. Preliminary application specific experiments show the membranes’ suitability for microfiltration and stencil applications.

2011

Chargement

EPFL2010