Kelvin | EPFL Graph Search

Le 'kelvin' (du nom de William Thomson, dit Lord Kelvin), de symbole K, est l'unité de base SI de température thermodynamique. Jusqu’au , le kelvin était défini comme la fraction 1/273,16 de la température thermodynamique du point triple de l'eau (), une variation de température d' étant équivalente à une variation d'. La nouvelle définition a pour objectif de respecter cette valeur, mais en l’ancrant sur une valeur fixée de la constante de Boltzmann. À la différence du degré Celsius, le kelvin est une mesure absolue de la température qui a été introduite grâce au troisième principe de la thermodynamique. La température de est égale à et correspond au zéro absolu (le point triple de l'eau est donc à la température ). Le kelvin, n'étant pas une mesure relative, n'est jamais précédé du mot « degré » ni du symbole « ° », contrairement aux degrés Celsius ou Fahrenheit. Échelle kelvin des températures L'échelle des températures Celsius est, pa

Fast temperature cycling of the catalytic CO oxidation using microstructure reactors

Martin Luther

The possibility to increase the performance (productivity or selectivity) of a chemical reactor by using periodic variations of reaction parameters (e.g. reactant concentration or temperature) has been theoretically envisaged since the beginning of the 70th. The experimental validation of the predicted positive effects was successful in the case of concentration variation but failed for temperature variation. This was mainly due to the high thermal inertia of the conventional chemical reactors used for the measurements which prevented to create variations having a sufficiently high frequency. Microstructure reactors own, at the contrary to conventional reactors, a very low thermal inertia and allow to generate temperature oscillations with an amplitude of about ten to hundred Kelvin at a frequency in the order of magnitude of 10-1 to 4 Hz. These properties, coupled with the possibility to introduce a catalytic active material within the devices, seem to make them well suited for the study of the effects of fast periodic temperature variations of a catalytic reaction. The objective of this work was to demonstrate that non-stationary temperature conditions may increase the reaction rate of a heterogeneously catalyzed reaction up to values not predicted by the classical Arrhenius dependency towards the temperature. Two different types of microstructure reactors have been used. The reaction was taking place in the first one (FTC-type 2) in microstructured channels on whose walls a catalytic layer was deposed. In the second one (FTC-type 3), the reaction was taking place on a piece of sintered metal fibres (SMF) plate placed in a reaction chamber. The catalytic active material was deposed on the SMF plate filaments. Both devices where permanently heated by electrical resistors and periodically cooled down with water flowing through cooling channels incorporated in the devices. The test reaction chosen for the experimental measurements was the CO oxidation reaction, heterogeneously catalyzed by platinum supported on alumina (Pt/Al2O3). The reaction behaviour under stationary thermal conditions was consistent with the one predicted by the Arrhenius law. The dependency of the reaction rate with the temperature was exponential with an apparent activation energy of 104 kJ·mol-1, a negative partial reaction order for CO and a positive one for O2. The measurements effectuated under quasi-stationary thermal conditions (slow temperature ramps) have shown that a temperature change rate between 7 and 14 K·min-1 was not sufficient to observe any non-trivial effect of the temperature. The reaction behaviour was always predicted by the Arrhenius law. The surface coverage of the reactive species is, in this case, always able to follow the slow temperature changes and the reaction behaves as being always under steady-state conditions. The experiments realized under non-stationary thermal conditions using the FTC-type 2 reactor have also failed to demonstrate any non-trivial effects of the temperature oscillations. This device allows indeed to generate temperature oscillations with an amplitude of up to 120 K with a frequency of 0.1 Hz but unfortunately correlated with a very high thermal inhomogeneity. A temperature difference of up to 80 K was measured between a cold spot and a hot spot inside the device. Due to their very low local reaction rate the colder areas of the reactor have attenuated the product concentration (CO2) oscillations which should have been created by the temperature variations. This attenuation prevented the temperature oscillations to have any positive effect compared to the stationary thermal conditions. The FTC-type 3 reactor allowed temperature changes of lower amplitude but the thermal homogeneity was much better. The maximal temperature difference measured between two points within the reactor was only 15 K. Under temperature oscillation conditions, the measured instantaneous CO2 concentration was higher for any temperature within the oscillation range compared to the one recorded under stationary thermal conditions. The increase obtained in the mean CO2 concentration was ranging from 34% for a frequency of the oscillations of 0.035 Hz to 85% for a frequency of 0.052 Hz. The amplitude of the oscillations was kept constant at approximately 40 K and the mean temperature value at 437 K. The simulations effectuated using a theoretical model for the catalytic CO oxidation including a feed-back step in the form of the oxidation-reduction of the catalyst have shown that the experimentally observed increase may be qualitatively explained. Above a certain frequency, the temperature oscillations are fast enough compared to the characteristic time of the feedback step and are able to perturb the stationary established reactive species surface coverage. The formation of a transient surface coverage more favourable for the reaction than the surface coverage at high temperature allows during the transient period to reach an instantaneous surface reaction rate values higher than the one at high temperature. This reaction rate peak is then responsible for the increase of the mean reaction rate under non-stationary thermal conditions and, thus, for an increased yield.

EPFL2008

A cryo-CMOS chip that integrates silicon quantum dots and multiplexed dispersive readout electronics

Edoardo Charbon, Yatao Peng, Andrea Ruffino

An integrated circuit fabricated using industry-standard 40 nm complementary metal-oxide-semiconductor technology can combine silicon quantum devices, digital addressing and analogue multiplexed dispersive readout electronics. As quantum computers grow in complexity, the technology will have to evolve from large distributed systems to compact integrated solutions. Spin qubits in silicon quantum dots are thought to offer good scalability because both spin-carrying quantum dots and support complementary metal-oxide-semiconductor (CMOS) electronics can, in principle, be monolithically integrated on a single chip. However, monolithically integrated quantum-classical hybrid circuits based on industry-standard CMOS technology remain limited. Here we report a millikelvin integrated circuit fabricated using 40 nm CMOS technology that integrates silicon quantum-dot arrays with support electronics in an architecture that allows the array to be efficiently addressed and read. The architecture contains integrated microwave lumped-element resonators for dispersive sensing of the charge state of the quantum dots, mediated via digital transistors in a column-row-addressing distribution. With the chip, we demonstrate combined time- and frequency-division multiplexing, which scales sublinearly the resources as well as footprint required for readout.

NATURE PORTFOLIO2021

Cryo-CMOS Electronics for Quantum Computing Applications

Edoardo Charbon

Quantum computers hold the promise to solve some of the most complex problems of today. The core of a quantum computer is a quantum processor, which is composed of quantum bits (qubits). Qubits are fragile and their state needs to be corrected in real time by a classical controller. Today, the control of qubits is done at room temperature by racks of instruments, while qubits operate at several tens of milli-Kelvin. To ensure compactness, and eventually scalability, we have proposed the use of controllers operating at a few Kelvin, so as to reduce the length of control cables, while potentially enabling superconductive interconnects, which enable virtually zero resistance and low thermal conductivity. We have chosen CMOS to achieve this functionality due to its scalable nature and overall miniaturization opportunities. Cryogenic CMOS, or cryo-CMOS, circuits and systems need to be carefully designed, so as to ensure low noise and high bandwidth, while operating at strict power budgets of a few milliwatts per qubit. In this paper, we outline the requirements of a classical controller and we show examples of such circuits and systems. Results and perspectives are presented discussing a roadmap for the future.

IEEE2019

Fast temperature cycling of the catalytic CO oxidation using microstructure reactors

Martin Luther

EPFL2008