Concept

GlobalFoundries

Publications associées (187)

Multi-Ported GC-eDRAM Bitcell with Dynamic Port Configuration and Refresh Mechanism

Embedded memories occupy an increasingly dominant part of the area and power budgets of modern systems-on-chips (SoCs). Multi-ported embedded memories, commonly used by media SoCs and graphical processing units, occupy even more area and consume higher pow ...

MDPI2024

Integrated electronics for time-of-flight positron emission tomography photodetectors

Andrada Alexandra Muntean

Positron emission tomography is a nuclear imaging technique well known for its use in oncology for cancer diagnosis and staging. A PET scanner is a complex machine which comprises photodetectors placed in a ring configuration that detect gamma photons gene ...

EPFL2023

System-Level Exploration of In-Package Wireless Communication for Multi-Chiplet Platforms

David Atienza Alonso, Marina Zapater Sancho, Giovanni Ansaloni, Rafael Medina Morillas, Joshua Alexander Harrison Klein

Multi-Chiplet architectures are being increasingly adopted to support the design of very large systems in a single package, facilitating the integration of heterogeneous components and improving manufacturing yield. However, chiplet-based solutions have to ...

2023

Integrated silicon photonic MEMS

Niels Quack, Hamed Sattari, Alain Yuji Takabayashi

Silicon photonics has emerged as a mature technology that is expected to play a key role in critical emerging applications, including very high data rate optical communications, distance sensing for autonomous vehicles, photonic-accelerated computing, and ...

SPRINGERNATURE2023

A 128-kbit GC-eDRAM With Negative Boosted Bootstrap Driver for 11.3x Lower-Refresh Frequency at a 2.5% Area Overhead in 28-nm FD-SOI

Andreas Peter Burg, Robert Giterman, Halil Andac Yigit, Emmanuel Nieto Casarrubias

Gain-cell embedded DRAM (GC-eDRAM) is a high-density logic-compatible alternative to conventional static random-access memory (SRAM) and embedded DRAM (eDRAM). However, GC-eDRAM suffers from a reduced data retention time (DRT) at deeply-scaled process node ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

Computational Imaging SPAD Cameras

Andrei Ardelean

Vision systems built around conventional image sensors have to read, encode and transmit large quantities of pixel information, a majority of which is redundant. As a result, new computational imaging sensor architectures were developed to preprocess the r ...

EPFL2023

Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID

Jean-Michel Sallese, Adil Koukab, Gennaro Termo, Stefano Michelis

The discovery of a large fab-to-fab variability in the TID response of the CMOS technologies used in the design of ASICs for the particle detectors of the HL-LHC triggered a monitoring effort to verify the consistency of the CMOS production process over ti ...

IOP Publishing Ltd2023

A heterogeneously integrated lithium niobate-on-silicon nitride photonic platform

Tobias Kippenberg, Rui Ning Wang, Anat Siddharth, Mikhail Churaev, Viacheslav Snigirev, Junqiu Liu, Miles Henry Anderson

The availability of thin-film lithiumniobate on insulator (LNOI) and advances in processing have led to the emergence of fully integrated LiNbO3 electro-optic devices. Yet to date, LiNbO3 photonic integrated circuits have mostly been fabricated using non-s ...

NATURE PORTFOLIO2023

A 1-GS/s 6-8-b Cryo-CMOS SAR ADC for Quantum Computing

Edoardo Charbon, Fabio Sebastiano, Alessandro Catania

This article presents a two-times interleaved, loop-unrolled SAR analog-to-digital converter (ADC) operational from 300 down to 4.2 K. The 6-8-bit resolution and the sampling speed up to 1 GS/s are targeted at digitizing the multi-channel frequency-multipl ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

Off-axis electron holography for the direct visualization of perpendicular shape anisotropy in nanoscale 3D magnetic random-access-memory devices

Perpendicular shape anisotropy (PSA) and double magnetic tunnel junctions (DMTJs) offer practical solutions to downscale spin-transfer-torque Magnetic Random-Access Memory (STT-MRAM) beyond 20 nm technology nodes, while retaining their thermal stability an ...

AIP Publishing2022

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