Publications associées à Montage cascode

Quantum-Limited Directional Amplifiers with Optomechanics

Tobias Kippenberg, Nathan Rafaël Bernier, László Dániel Tóth

Directional amplifiers are an important resource in quantum-information processing, as they protect sensitive quantum systems from excess noise. Here, we propose an implementation of phase-preserving and phase-sensitive directional amplifiers for microwave ...

2018

A Design-oriented Charge-based Simplified Model for FDSOI MOSFETs

Christian Enz, Farzan Jazaeri, Alessandro Pezzotta, Louis Hutin

In this paper a design-oriented model for asymmetrical double-gate (ADG) MOSFETs is proposed. Including the back-gate effect into the original simplified EKV bulk model requires only one additional parameter to the existing four, and extends the simplified ...

2018

Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below V-DD=400mV

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Hiroshi Iwai

We report the universal boosting impact of a true negative capacitance (NC) effect on digital and analog performances of Tunnel FETs (TFETs), mirrored for the first time in near hysteresis-free experiments and exploiting the S-shaped polarization character ...

IEEE2018

Design Considerations of Ferroelectric Properties for Negative Capacitance MOSFETs

Mihai Adrian Ionescu, Christian Enz, Farzan Jazaeri, Ali Saeidi

Impact of physical parameters of ferroelectric layer on the performance of Negative Capacitance (NC) MOSFETs is experimentally studied in this paper. Electrical behaviors of PZT-based and Si:HfO2-based NC-FETs are investigated and discussed. In a PZT-based ...

2018

High, Anisotropic, and Substrate-Independent Mobility in Polymer Field-Effect Transistors Based on Preassembled Semiconducting Nanofibrils

Laura Ferlauto, Marc-Antoine Stoeckel

Achieving nanoscale control over the crystalline structure and morphology of electroactive polymer films and the possibility to transfer them onto any solid substrate are important tasks for the fabrication of highperformance organic/polymeric field-effect ...

Amer Chemical Soc2017

Double-Gate Negative-Capacitance MOSFET with PZT gate stack on Ultra-Thin Body SOI: an Experimentally Calibrated Simulation Study of Device Performance

Mihai Adrian Ionescu, Igor Stolichnov, Farzan Jazaeri, Ali Saeidi

In this work, we propose and investigate the high performance and low power design space of non-hysteretic negative capacitance MOSFETs for the 14nm node based on the calibrated simulations using an experimental gate stack with PZT ferroelectric to obtain ...

2016

Hybrid phase-change — Tunnel FET (PC-TFET) switch with subthreshold swing < 10mV/decade and sub-0.1 body factor: Digital and analog benchmarking

Mihai Adrian Ionescu, Anna Krammer, Teodor Rosca, Josef Andreas Schuler, Wolfgang Amadeus Vitale, Cem Alper, Arnab Biswas, Emanuele Andrea Casu, Nicolò Oliva

In this paper we report the first hybrid Phase-Change - Tunnel FET (PC-TFET) device configurations for achieving a deep sub-thermionic steep subthreshold swing at room temperature and subthreshold power savings. The proposed hybrid device feedbacks the ste ...

IEEE2016

Condition for the negative capacitance effect in metal–ferroelectric–insulator–semiconductor devices

Mihai Adrian Ionescu, Ali Saeidi, Alexandru Rusu

In this paper, we report a detailed study of the negative capacitance field effect transistor (NCFET). We present the condition for the stabilization of the negative capacitance to achieve the voltage amplification across the active layer. The theory is ba ...

Institute of Physics2016

Wafer-Level Hysteresis-Free Resonant Carbon Nanotube Transistors

Mihai Adrian Ionescu, Ji Cao, Sebastian Thimotee Bartsch

We report wafer-level fabrication of resonant-body, carbon nanotube (CNT)field-effect transistors (FETs) in a dual-gate configuration. An integration density of >10(6) CNTFETs/cm(2), an assembly yield of >80%, and nanoprecision have been simultaneously obt ...

Amer Chemical Soc2015

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Montage cascode

Quantum-Limited Directional Amplifiers with Optomechanics

A Design-oriented Charge-based Simplified Model for FDSOI MOSFETs

Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below V-DD=400mV

Design Considerations of Ferroelectric Properties for Negative Capacitance MOSFETs

High, Anisotropic, and Substrate-Independent Mobility in Polymer Field-Effect Transistors Based on Preassembled Semiconducting Nanofibrils

A 4.7μW switched-bias MEMS microphone preamplifier for ultra-low-power voice interfaces

Double-Gate Negative-Capacitance MOSFET with PZT gate stack on Ultra-Thin Body SOI: an Experimentally Calibrated Simulation Study of Device Performance

Hybrid phase-change — Tunnel FET (PC-TFET) switch with subthreshold swing < 10mV/decade and sub-0.1 body factor: Digital and analog benchmarking

Condition for the negative capacitance effect in metal–ferroelectric–insulator–semiconductor devices

Wafer-Level Hysteresis-Free Resonant Carbon Nanotube Transistors

Graph Chatbot

Chattez avec Graph Search

A 4.7μW switched-bias MEMS microphone preamplifier for ultra-low-power voice interfaces

Hybrid phase-change — Tunnel FET (PC-TFET) switch with subthreshold swing < 10mV/decade and sub-0.1 body factor: Digital and analog benchmarking

Double-Gate Negative-Capacitance MOSFET with PZT gate stack on Ultra-Thin Body SOI: an Experimentally Calibrated Simulation Study of Device Performance

Quantum-Limited Directional Amplifiers with Optomechanics

A Design-oriented Charge-based Simplified Model for FDSOI MOSFETs

High, Anisotropic, and Substrate-Independent Mobility in Polymer Field-Effect Transistors Based on Preassembled Semiconducting Nanofibrils

Wafer-Level Hysteresis-Free Resonant Carbon Nanotube Transistors

Design Considerations of Ferroelectric Properties for Negative Capacitance MOSFETs

Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below V-DD=400mV

Condition for the negative capacitance effect in metal–ferroelectric–insulator–semiconductor devices