Concept

Silicon nanowire

Publications associées (193)

Engineering light absorption in single-nanowire solar cells with metal nanoparticles

Anna Fontcuberta i Morral, Carlo Colombo

Semiconductor nanowires (NWs) possess a fascinating ability to efficiently collect and trap light into a sub-wavelength volume due to the occurrence of leaky mode resonances. The same confinement ability is manifested by metal nanostructures thanks to the ...

Institute of Physics (IoP) and Deutsche Physikalische Gesellschaft2011

High Throughput Nanofabrication of Silicon Nanowire and Carbon Nanotube Tips on AFM Probes by Stencil-Deposited Catalysts

Jürgen Brugger, Andreea Veronica Savu

A new and versatile technique for the wafer scale nanofabrication of silicon nanowire (SiNW) and multiwalled carbon nanotube (MWNT) tips on atomic force microscope (AFM) probes is presented. Catalyst material for the SiNW and MWNT growth was deposited on p ...

2011

Uniaxially tensile strained accumulation-mode gate-all-around Si nanowire nMOSFETs

Mihai Adrian Ionescu, Didier Bouvet, Wladyslaw Grabinski, Mohammad Najmzadeh

In this work we report an experimental study on accumulation-mode (AM) gate-all-around (GAA) nMOSFETs based on silicon nanowires with uniaxial tensile strain. Their electrical characteristics are studied from room temperature up to ~400 K and carrier mobil ...

2011

Gold-Free GaAs Nanowire Synthesis and Optical Properties

Anna Fontcuberta i Morral

To date, the use of gold for the synthesis of nanowires has proven to be nearly impossible to circumvent, regardless of the potential negative effects on the nanowires physical properties. In this paper, the synthesis of gallium arsenide nanowires without ...

Institute of Electrical and Electronics Engineers2011

Decomposition, diffusion, and growth rate anisotropies in self-limited profiles during metalorganic vapor-phase epitaxy of seeded nanostructures

Elyahou Kapon, Alok Rudra, Klaus Leifer

We present a model for the interplay between the fundamental phenomena responsible for the formation of nanostructures by metalorganic vapor phase epitaxy on patterned (001)/(111)B GaAs substrates. Experiments have demonstrated that V-groove quantum wires ...

2011

Biexciton emission and crystalline quality of ZnO nano-objects

Jean-Philippe Ansermet, Benoît Marie Joseph Deveaud, Pierre Stadelmann, Jean-Daniel Ganière, Pierre Michel Corfdir, Anas Mouti, Elisa Papa

The design of cost-effective standards for the quality of nano-objects is currently a key issue toward their massive use for optoelectronic applications. The observation by photoluminescence of narrow excitonic and biexcitonic emission lines in semiconduct ...

Institute of Physics2011

Three-Dimensional Multiple-Order Twinning of Self-Catalyzed GaAs Nanowires on Si Substrates

Anna Fontcuberta i Morral, François Morier-Genoud, Martin Heiss, Eleonora Russo, Emanuele Uccelli, Gabriel Mugny

In this paper we introduce a new paradigm for nanowire growth that explains the unwanted appearance of parasitic nonvertical nanowires. With a crystal structure polarization analysis of the initial stages of GaAs nanowire growth on Si substrates, we demons ...

American Chemical Society2011

Nonlinear Optical Response in Single Alkaline Niobate Nanowires

Aleksandra Radenovic, Kurt Schenk, Fabrizia Dutto, Camille Alice Raillon

We have synthesized and characterized three types of perovskite alkaline niobate nanowires: NaNbO3, KNbO3, and LiNbO3 (XNbO3). All three types of nanowires exhibit strong nonlinear response. Confocal imaging has been employed to quantitatively compare the ...

2011

Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs

Mihai Adrian Ionescu, Didier Bouvet, Luca De Michielis, Mohammad Najmzadeh

In this work we present for the first time correlation of lateral uniaxial tensile strain and I–V characteristics of GAA Si NW n-MOSFET, all measured on the same device. Micro-Raman spectroscopy is employed for direct strain measurement on devices to explo ...

Elsevier2010

Growth study of indium-catalyzed silicon nanowires by plasma enhanced chemical vapor deposition

Anna Fontcuberta i Morral, Sonia Conesa Boj, Libo Yu, Père Roca i Cabarrocas

Indium was used as a catalyst for the synthesis of silicon nanowires in a plasma enhanced chemical vapor deposition reactor. In order to foster the catalytic activity of indium, the indium droplets had to be exposed to a hydrogen plasma prior to nanowire g ...

2010

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