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Concept
Band bending
Résumé
In solid-state physics, band bending refers to the process in which the electronic band structure in a material curves up or down near a junction or interface. It does not involve any physical (spatial) bending. When the electrochemical potential of the free charge carriers around an interface of a semiconductor is dissimilar, charge carriers are transferred between the two materials until an equilibrium state is reached whereby the potential difference vanishes. The band bending concept was first developed in 1938 when Mott, Davidov and Schottky all published theories of the rectifying effect of metal-semiconductor contacts. The use of semiconductor junctions sparked the computer revolution in 1990. Devices such as the diode, the transistor, the photocell and many more still play an important role in technology.
Band bending can be induced by several types of contact. In this section metal-semiconductor contact, surface state, applied bias and adsorption induced band bending are discussed.
Figure 1 shows the ideal band diagram (i.e. the band diagram at zero temperature without any impurities, defects or contaminants) of a metal with an n-type semiconductor before (top) and after contact (bottom). The work function is defined as the energy difference between the Fermi level of the material and the vacuum level before contact and is denoted by . When the metal and semiconductor are brought in contact, charge carriers (i.e. free electrons and holes) will transfer between the two materials as a result of the work function difference .
If the metal work function () is larger than that of the semiconductor (), that is , the electrons will flow from the semiconductor to the metal, thereby lowering the semiconductor Fermi level and increasing that of the metal. Under equilibrium the work function difference vanishes and the Fermi levels align across the interface. A Helmholtz double layer will be formed near the junction, in which the metal is negatively charged and the semiconductor is positively charged due to this electrostatic induction.
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Concepts associés (9)
Metal–semiconductor junction
In solid-state physics, a metal–semiconductor (M–S) junction is a type of electrical junction in which a metal comes in close contact with a semiconductor material. It is the oldest practical semiconductor device. M–S junctions can either be rectifying or non-rectifying. The rectifying metal–semiconductor junction forms a Schottky barrier, making a device known as a Schottky diode, while the non-rectifying junction is called an ohmic contact.
Surface states
Surface states are electronic states found at the surface of materials. They are formed due to the sharp transition from solid material that ends with a surface and are found only at the atom layers closest to the surface. The termination of a material with a surface leads to a change of the electronic band structure from the bulk material to the vacuum. In the weakened potential at the surface, new electronic states can be formed, so called surface states.
Band diagram
In solid-state physics of semiconductors, a band diagram is a diagram plotting various key electron energy levels (Fermi level and nearby energy band edges) as a function of some spatial dimension, which is often denoted x. These diagrams help to explain the operation of many kinds of semiconductor devices and to visualize how bands change with position (band bending). The bands may be coloured to distinguish level filling. A band diagram should not be confused with a band structure plot.