Publications de Pierre Michel Corfdir

Radius-dependent homogeneous strain in uncoalesced GaN nanowires

We investigate the strain state of ensembles of thin and nearly coalescence-free self-assembled GaN nanowires prepared by plasma-assisted molecular beam epitaxy on Ti/Al2O3 (0001) substrates. The shifts of Bragg peaks in high-resolution X-ray diffraction p ...

PERGAMON-ELSEVIER SCIENCE LTD2020

Tuning the g-factor of neutral and charged excitons confined to self-assembled (Al,Ga)As shell quantum dots

Anna Fontcuberta i Morral, Martin Heiss, Eleonora Russo, Pierre Michel Corfdir, Yannik Fontana

We study the neutral exciton (X) and charged exciton (CX) transitions from (Al,Ga) As shell quantum dots located in core-shell nanowires, in the presence of a magnetic field. The g-factors and the diamagnetic coefficients of both the X and the CX depend on ...

American Institute of Physics2014

Exciton footprint of self-assembled AlGaAs quantum dots in core-shell nanowires

Anna Fontcuberta i Morral, Martin Heiss, Yannik Fontana, Eleonora Russo, Pierre Michel Corfdir, Samuel Sonderegger

Quantum-dot-in-nanowire systems constitute building blocks for advanced photonics and sensing applications. The electronic symmetry of the emitters impacts their function capabilities. Here we study the fine structure of gallium-rich quantum dots nested in ...

American Physical Society2014

Three-Dimensional Magneto-Photoluminescence as a Probe of the Electronic Properties of Crystal-Phase Quantum Disks in GaAs Nanowires

Anna Fontcuberta i Morral, Pierre Michel Corfdir, Sonia Conesa Boj, Emanuele Uccelli

Crystal-phase engineering has emerged as a novel method of bandgap engineering, made feasible by the high surface-to-volume ratio of nanowires. There remains intense debate about the exact characteristics of the band structure of the novel crystal phases, ...

Amer Chemical Soc2013

Charge carrier generation, relaxation, and recombination in polytypic GaAs nanowires studied by photoluminescence excitation spectroscopy

Pierre Michel Corfdir, Anna Fontcuberta i Morral, Emanuele Uccelli

We report results of a study of polytypic GaAs nanowires using low-temperature photoluminescence excitation spectroscopy. The nanowire ensemble shows a strong absorption at 1.517 eV, as a result of resonant generation of heavy-hole excitons in the zinc-ble ...

American Institute of Physics2013

Quantitative Cathodoluminescence Opens New Areas of Investigation in Semiconductor Research and Production

Jean-Daniel Ganière, Pierre Michel Corfdir

Cambridge, Cambridge University Press2013

Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates

Nicolas Grandjean, Benoît Marie Joseph Deveaud, Etienne François Olivier Giraud, Jean-Daniel Ganière, Pierre Michel Corfdir, Mehran Shahmohammadi

This article presents the dynamics of excitons in a-plane (Al,Ga)N/GaN single quantum wells of various thicknesses grown on bulk GaN substrates. For all quantum well samples, recombination is observed to be predominantly radiative in the low-temperature ra ...

Japan Society of Applied Physics2013

Impact of biexcitons on the relaxation mechanisms of polaritons in III-nitride based multiple quantum well microcavities

Nicolas Grandjean, Jean-François Carlin, Benoît Marie Joseph Deveaud, Raphaël Butté, Jacques Levrat, Eric Feltin, Jean-Daniel Ganière, Gabriel Christmann, Pierre Michel Corfdir, Georg Rossbach

We report on the direct observation of biexcitons in a III-nitride based multiple quantum well microcavity operating in the strong light-matter coupling regime by means of nonresonant continuous wave and time-resolved photoluminescence at low temperature. ...

2012

Time-resolved cathodoluminescence on polychromatic light emitting (In,Ga)N quantum wells grown on (11-22) GaN facets

Jean-François Carlin, Nicolas Grandjean, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Eric Feltin, Pierre Michel Corfdir, Dobri Simeonov

We present a low-temperature time-resolved cathodoluminescence study on (In,Ga)N/GaN quantum wells grown on the (11-22) facets of non-coalesced ELO-GaN. Taking advantage of the quantum confined Stark effect, such structures have been proposed as promising ...

V C H Publishers, Suite 909, 220 E 23Rd St, New York, Ny 10010 Usa2011

Physics of the Ultrafast Dynamics of Excitons in GaN Nanostructures

Pierre Michel Corfdir

For more than fifteen years, III-nitrides have become the materials of choice for the realization of optoelectronics devices operating in the visible-UV spectral range. Yet, while nitride-based technology has truly exploded, the structural quality of this ...

EPFL2011