Publication
Small signal analysis of electrically-stressed oxides with Poisson-Schroedinger based multiphonon capture model
Résumé
Defects in MOSFET oxides are a major issue in CMOS technologies, affecting not only the device electrical performances but also compromising reliability and endurance. Using Charge-Pumping and C-V measurements, defects have been characterized in native and electrically-aged oxides. These electrical measurements have been compared to the predictions of advanced simulations, accounting for multi-phonon assisted emission/capture rates and including the presence of multiple defects and the contribution of electron and holes tunneling from both the gate and the channel. The proposed model allows an accurate description of the dynamics of trap occupation during electrical stress and can be used for the rigorous extraction of trap concentration from CV measurements.
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Concepts associés (31)
Complementary metal oxide semi-conductor
vignette|Vue en coupe d'un transistor MOS On appelle CMOS, ou Complementary Metal Oxide Semiconductor, une technologie de fabrication de composants électroniques et, par extension, les composants fabriqués selon cette technologie. Ce sont pour la plupart des circuits logiques (NAND, NOR) comme ceux de la famille Transistor-Transistor logic (TTL) mais, à la différence de ces derniers, ils peuvent être aussi utilisés comme résistance variable.
Transistor à effet de champ à grille métal-oxyde
thumb|right|235px|Photographie représentant deux MOSFET et une allumette Un transistor à effet de champ à grille isolée plus couramment nommé MOSFET (acronyme anglais de metal-oxide-semiconductor field-effect transistor — qui se traduit par transistor à effet de champ à structure métal-oxyde-semiconducteur), est un type de transistor à effet de champ. Comme tous les transistors, le MOSFET module le courant qui le traverse à l'aide d'un signal appliqué sur son électrode nommée grille.
Multigate device
A multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET).
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Introduction à l’électronique analogique- seconde partie. Fonctions linéaires de base réalisée à l’aide de transistor bipolaire.
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Introduction à l’électronique analogique- seconde partie. Fonctions linéaires de base réalisée à l’aide de transistor bipolaire.
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