We report on the design and characterization of three different architectures, namely two Time-to- Digital Converters (TDCs) and a Time-to-Amplitude Converter (TAC) with embedded analog-to-digital conversion, implemented in a 130-nm CMOS imaging technology. The proposed circuit solutions are conceived for implementation at pixel-level, in image sensors exploiting Single-Photon Avalanche Diodes as photodetectors. The fabricated 32x32 TDCs/TACs arrays have a pitch of 50μm in both directions while the average power consumption is between 28mW and 300mW depending on the architectural choice. The TAC achieves a time resolution of 160ps on a 20-ns time range with a differential and integral non-linearity (DNL, INL) of 0.7LSB and 1.9LSB, respectively. The two TDCs have a 10-bit resolution with a minimum time resolution between 50ps and 119ps and a worst-case accuracy of ±0.5 LSB DNL and 2.4 LSB INL. An overview of the performance is given together with the analysis of the pros and cons for each architecture.
Edoardo Charbon, Francesco Piro, Ashish Sharma