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Design methodology for ultra low-power analog circuits using next generation BSIM6 MOSFET compact model

Publications associées (34)

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This paper presents the open-source Python-based parameter extractor (SEKV-E) for the simplified EKV (sEKV) model, which enables the modern low-power circuit designs with the inversion coefficient design methodology. The tool extracts the essential sEKV pa ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Analysis of Functional Errors Produced by Long-Term Workload-Dependent BTI Degradation in Ultra-Low Power Processors

David Atienza Alonso, Alexandre Sébastien Julien Levisse, Miguel Peon Quiros, Ruben Braojos Lopez, Loris Gérard Duch

Aging effects in digital circuits change the switching characteristics of their transistors, resulting in timing violations that can lead to functional errors at the system level. In particular, BTI is a degradation effect that changes the threshold voltag ...

2020

Polarity-Controllable Devices and Circuits for Doping-Free 2D Electronics

Giovanni Vincenzo Resta

The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâs la ...

EPFL2019

Circuit Designs of High-Performance and Low-Power RRAM-Based Multiplexers Based on 4T(ransistor)1R(RAM) Programming Structure

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Xifan Tang, Edouard Giacomin

Routing multiplexers based on pass-transistors or transmission gates are an essential components in many digital integrated circuits. However, whatever structure is employed, CMOS multiplexers have two major limitations: 1) their delay is linearly related ...

Ieee-Inst Electrical Electronics Engineers Inc2017

During the last decades, the usage of silicon photodetectors, both as stand-alone sensor or integrated in arrays, grew tremendously. They are now found in almost any application and any market range, from leisure products to high-end scientific apparatuses ...

EPFL2016

Transistors are the fundamental elements in Integrated Circuits (IC). The development of transistors significantly improves the circuit performance. Numerous technology innovations have been adopted to maintain the continuous scaling down of transistors. W ...

EPFL2016

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Continuous transistor scaling, coupled with the growing demand for low-voltage, low-power applications, increases the susceptibility of VLSI circuits to soft-errors, especially when exposed to extreme environmental conditions, such as those encountered by ...

Institute of Electrical and Electronics Engineers2016

Polarity Control at Runtime

Michele De Marchi

Semiconductor device research for digital circuit design is currently facing increasing challenges to enhance miniaturization and performance. A huge economic push and the interest in novel applications are stimulating the development of new pathways to ov ...

EPFL2015

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Double-Gate (DG) controllable-polarity Field-Effect Transistors (FETs) are devices whose n- or p- polarity is on-line configurable by adjusting the second gate voltage. Such emerging transistors have been fabricated in silicon nanowires, carbon nanotuges a ...

Institute of Electrical and Electronics Engineers2014

MoS2 Transistors Operating at Gigahertz Frequencies

Andras Kis, Yusuf Leblebici, Clemens Benedict Nyffeler, Dominik Sebastian Lembke, Daria Krasnozhon

The presence of a direct band gap1-4 and an ultrathin form factor5 has caused a considerable interest in two-dimensional (2D) semiconductors from the transition metal dichalcogenides (TMD) family with molybdenum disulfide (MoS2) being the most studied repr ...

Amer Chemical Soc2014