Low-frequency Noise in Lattice-matched In0.52Al0.48As/In0.53Ga0.47As/InP HEMTs
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
Field-effect transistors (FETs) have established themselves as a leading platform for electrical detection of chemical and biological species. Their advantages over other optical, mechanical sensing platforms are attributed to being miniaturizable, mechani ...
Ion-sensitive field-effect transistors (ISFETs) form a high sensitivity and scalable class of sensors, compatible with advanced complementary metal-oxide semiconductor (CMOS) processes. Despite many previous demonstrations about their merits as low-power ...
In the last decade the power consumption of electronic devices has increased for both static and active components. Following the Dennard's scaling rule, as long as the transistor sizes are reduced then the supply voltage (VDD) can also be scaled in order ...
Nowadays, efficient and remote health monitoring is becoming increasingly important, given both the ageing of population and the combined action of an increase in obesity level and cardiovascular diseases. The healthcare industry is becoming more reliant o ...
Bulk CMOS technologies left the semiconductor market to the novel device geometries such as FDSOI and FinFET below 30 nm, mainly due to their insufficient electrical characteristics arising from different physical limitations. These innovative solutions en ...
Variability of Low Frequency Noise (LFN) and Random Telegraph Noise (RTN) is an important concern for many analog CMOS integrated circuits. In this paper, transistors with enclosed gate layout are examined and compared with standard layout transistors, wit ...
Transistors are the fundamental elements in Integrated Circuits (IC). The development of transistors significantly improves the circuit performance. Numerous technology innovations have been adopted to maintain the continuous scaling down of transistors. W ...
Total ionizing dose (TID) mechanisms are investigated in 28-nm MOSFETs via dc static and low-frequency noise measurements. nMOSFETs and pMOSFETs are irradiated up to 1 Grad(SiO2) and annealed at high temperatures. TID sensitivity depends on the channel len ...
We present an experimental investigation of slow transients in the gate and drain currents of MoS2-based transistors. We focus on the measurement of both the gate and drain currents and, from the comparative analysis of the current transients, we conclude ...
