Publication
A 73% Peak PDP Single-Photon Avalanche Diode Implemented in 110 nm CIS Technology With Doping Compensation
Publications associées (22)
Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process
Edoardo Charbon, Claudio Bruschini, Myung Jae Lee, Feng Liu
We introduce a new family of single-photon avalanche diodes (SPADs) with enhanced depletion regions in a 55-nm Bipolar-CMOS-DMOS (BCD) technology. We demonstrate how to systematically engineer doping profiles in the main junction and in deep p-well layers ...
Piscataway2024Time-resolved multi-gate ion sensitive field effect transducer and system and method of operating the same
Jean-Michel Sallese, Adil Koukab
A time-resolved multi-gate ion sensitive field effect transducer, including a silicon layer, a P-doped region in the silicon layer and a first electrode in electric connection with the P doped region, a N-doped region in the silicon layer and a second elec ...
2023Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures
Elison de Nazareth Matioli, Luca Nela, Catherine Erine, Amirmohammad Miran Zadeh
Super junctions (SJs) have enabled unprecedented performance in Silicon power devices, which could be further improved by applying this concept to wide bandgap semiconductors like gallium nitride (GaN). Currently, polarization super junctions (PSJs) are th ...
2022Hot-Hole versus Hot-Electron Transport at Cu/GaN Heterojunction Interfaces
Among all plasmonic metals, copper (Cu) has the greatest potential for realizing optoelectronic and photochemical hot-carrier devices, thanks to its CMOS compatibility and outstanding catalytic properties. Yet, relative to gold (Au) or silver (Ag), Cu has ...
AMER CHEMICAL SOC2020Dynamics of Electronic and Ionic Charges in Cyanine Organic Semiconductor Devices
Organic semiconductor materials have been widely applied in optoelectronic devices to replace their inorganic counterparts and explore new fields of applications. Due to their high extinction coefficients, chemical tunability and solubility, cyanine dyes a ...
EPFL2017Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy
Nicolas Grandjean, Marco Malinverni, Denis Martin, Hironori Okumura
We grew heavily Mg-doped GaN using ammonia molecular-beam epitaxy. The use of low growth temperature (740 degrees C) allows decreasing the incorporation of donor-like defects (
Amer Inst Physics2016Optimization of NH₃-MBE grown p-doped (Al)GaN layers and their implementation in long wavelength laser diodes and tunnel junctions
Over the last two decades III-nitride optoelectronic devices have experienced an impressive evolution in terms of performance. However, their potential is far from being fully exploited. Although they offer bandgaps from the deep UV to the infrared spectra ...
EPFL2015Modulation Doping of GaAs/AlGaAs Core-Shell Nanowires With Effective Defect Passivation and High Electron Mobility
Anna Fontcuberta i Morral, Federico Matteini, Alberto Casadei, Sonia Conesa Boj, Francesca Amaduzzi, Fauzia Jabeen
Reliable doping is required to realize many devices based on semiconductor nanowires. Group IIIV nanowires show great promise as elements of high-speed optoelectronic devices, but for such applications it is important that the electron mobility is not comp ...
American Chemical Society2015Spice-compatible modeling of high injection and propagation of minority carriers in the substrate of Smart Power ICs
Maher Kayal, Jean-Michel Sallese, Camillo Stefanucci, Pietro Buccella
Classical substrate noise analysis considers the silicon resistivity of an integrated circuit only as doping dependent besides neglecting diffusion currents as well. In power circuits minority carriers are injected into the substrate and propagate by drift ...
Elsevier2015Light Generation and Harvesting in a van der Waals Heterostructure
Aleksandra Radenovic, Andras Kis, Esther Alarcon Llado, Oriol López Sánchez, Volodymyr Koman
Two-dimensional (2D) materials are a new type of materials under intense study because of their interesting physical properties and wide range of potential applications from nanoelectronics to sensing and photonics. Monolayers of semiconducting transition ...
Amer Chemical Soc2014