Very large-scale integration (VLSI) is the process of creating an integrated circuit (IC) by combining millions or billions of MOS transistors onto a single chip. VLSI began in the 1970s when MOS integrated circuit (Metal Oxide Semiconductor) chips were developed and then widely adopted, enabling complex semiconductor and telecommunication technologies. The microprocessor and memory chips are VLSI devices.
Before the introduction of VLSI technology, most ICs had a limited set of functions they could perform. An electronic circuit might consist of a CPU, ROM, RAM and other glue logic. VLSI enables IC designers to add all of these into one chip.
The history of the transistor dates to the 1920s when several inventors attempted devices that were intended to control current in solid-state diodes and convert them into triodes. Success came after World War II, when the use of silicon and germanium crystals as radar detectors led to improvements in fabrication and theory. Scientists who had worked on radar returned to solid-state device development. With the invention of the first transistor at Bell Labs in 1947, the field of electronics shifted from vacuum tubes to solid-state devices.
With the small transistor at their hands, electrical engineers of the 1950s saw the possibilities of constructing far more advanced circuits. However, as the complexity of circuits grew, problems arose. One problem was the size of the circuit. A complex circuit like a computer was dependent on speed. If the components were large, the wires interconnecting them must be long. The electric signals took time to go through the circuit, thus slowing the computer.
The invention of the integrated circuit by Jack Kilby and Robert Noyce solved this problem by making all the components and the chip out of the same block (monolith) of semiconductor material. The circuits could be made smaller, and the manufacturing process could be automated. This led to the idea of integrating all components on a single-crystal silicon wafer, which led to small-scale integration (SSI) in the early 1960s, and then medium-scale integration (MSI) in the late 1960s.
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The course introduces the fundamentals of digital integrated circuits and the technology aspects from a designers perspective. It focuses mostly on transistor level, but discusses also the extension t
Test of VLSI Systems covers theoretical knowledge related to the major algorithms used in VLSI test, and design for test techniques. Basic knowledge related to computer-aided design for test technique
In this project-based course, students collect hands-on experience with designing full-custom digital VLSI circuits in dynamic logic. They learn to carry out the design and optimization on transistor
Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss", siːmɑːs, -ɒs) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips (including CMOS BIOS), and other digital logic circuits.
Electronic design automation (EDA), also referred to as electronic computer-aided design (ECAD), is a category of software tools for designing electronic systems such as integrated circuits and printed circuit boards. The tools work together in a design flow that chip designers use to design and analyze entire semiconductor chips. Since a modern semiconductor chip can have billions of components, EDA tools are essential for their design; this article in particular describes EDA specifically with respect to integrated circuits (ICs).
A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in most applications. They conduct electric current in the solid state, rather than as free electrons across a vacuum (typically liberated by thermionic emission) or as free electrons and ions through an ionized gas.
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