Publications related to Silicon nitride

First Near-Ultraviolet- and Blue-Enhanced Backside-Illuminated Single-Photon Avalanche Diode Based on Standard SOI CMOS Technology

Edoardo Charbon, Claudio Bruschini, Myung Jae Lee

We present the world's first backside-illuminated (BSI) single-photon avalanche diode (SPAD) based on standard silicon-on-insulator (SOI) complementary metal-oxide semiconductor (CMOS) technology. This SPAD achieves a good dark count rate (DCR) after backs ...

2019

Thermorefractive noise in silicon-nitride microresonators

Tobias Kippenberg, Guanhao Huang, Junqiu Liu, Erwan Guillaume Albert Lucas, Arslan Sajid Raja, Nils Johan Engelsen

Thermodynamic noise places a fundamental limit on the frequency stability of dielectric optical resonators. Here, we present the characterization of thermorefractive noise in photonic-chip-based silicon-nitride (Si3N4) microresonators and show that thermor ...

AMER PHYSICAL SOC2019

Silicon Photonic MEMS: Exploiting Mechanics at the Nanoscale to Enhance Photonic Integrated Circuits

Niels Quack, Hamed Sattari, Alain Yuji Takabayashi, Banafsheh Abasahl, Yu Zhang, Shiv Ashish Kumar

With the maturing and the increasing complexity of Silicon Photonics technology, novel avenues are pursued to reduce power consumption and to provide enhanced functionality: exploiting mechanical movement in advanced Silicon Photonic Integrated Circuits pr ...

IEEE2019

Low Temperature p-type Microcrystalline Silicon as Carrier Selective Contact for Silicon Heterojunction Solar Cells

Christophe Ballif, Mathieu Gérard Boccard, Raphaël Monnard, Angela Nicole Fioretti

Silicon heterojunction (SHJ) solar cells have reached record efficiency, particularly in all-back-contacted architectures. Despite this, two-side contacted SHJ cells still suffer from parasitic absorption and series resistance losses in the amorphous silic ...

2019

Probing alloy formation using different excitonic species: The particular case of InGaN

Nicolas Grandjean, Raphaël Butté, Gordon Jens Callsen

Since the 1960s, alloys are grouped into two classes, featuring bound states in the bandgap (I - GaP:N, ZnTe:O, etc.) or additional, non-discrete, band states (II - SiGe, GaAsP, InGaAs, etc.). Therefore, one can observe either a rich and informative zoo of ...

IEEE2019

Design and Optimization of a Low Power and Fast Response Viscometer Used for Determination of the Natural Gas Wobbe Index

Danick Briand, Pierre-André Farine, Gaël André Léon Farine, Conor Joseph Slater, Marjan Shaker

This paper reports on the design of a microsystem-based thermal gas viscometer used for the determination of the quality of natural gas and its optimization through modification of its two main components: the hotplate and the capillary tube. Features, suc ...

2019

Acoustic Actuation Of Suspended Graphene For Linear Excitation Of 2D Nems

Luis Guillermo Villanueva Torrijo, Muhammad Faizan, Marsha Mary Parmar

In this paper, we present the fabrication of on-chip piezoelectric acoustic actuation for 2D materials. Acoustic actuation is achieved at device level through patterning of aluminum nitride (AlN) thin film at wafer scale. Two piezoelectric stacks consistin ...

IEEE2019

High performance Fully-vertical GaN-on-Si power MOSFETs

Elison de Nazareth Matioli, Chao Liu

We report the first demonstration of fully-vertical power MOSFETs on 6.6-μm-thick GaN grown on a 6-inch Si substrate by metal-organic chemical vapor deposition (MOCVD). A robust fabrication method was developed based on a selective and local removal of the ...

IEEE2019

Shape memory polymer resonators as highly sensitive uncooled infrared detectors

Herbert Shea, Luis Guillermo Villanueva Torrijo, Tom Larsen, Juan José Zarate, Ulas Adiyan

Uncooled infrared detectors have enabled the rapid growth of thermal imaging applications. These detectors are predominantly bolometers, reading out a pixel’s temperature change due to infrared radiation as a resistance change. Another uncooled sensing met ...

2019

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Silicon nitride

First Near-Ultraviolet- and Blue-Enhanced Backside-Illuminated Single-Photon Avalanche Diode Based on Standard SOI CMOS Technology

Structural and microstructural studies on SiC-SiO2 ceramic composites

Thermorefractive noise in silicon-nitride microresonators

Silicon Photonic MEMS: Exploiting Mechanics at the Nanoscale to Enhance Photonic Integrated Circuits

Low Temperature p-type Microcrystalline Silicon as Carrier Selective Contact for Silicon Heterojunction Solar Cells

Probing alloy formation using different excitonic species: The particular case of InGaN

Design and Optimization of a Low Power and Fast Response Viscometer Used for Determination of the Natural Gas Wobbe Index

Acoustic Actuation Of Suspended Graphene For Linear Excitation Of 2D Nems

High performance Fully-vertical GaN-on-Si power MOSFETs

Shape memory polymer resonators as highly sensitive uncooled infrared detectors

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Chat with Graph Search

First Near-Ultraviolet- and Blue-Enhanced Backside-Illuminated Single-Photon Avalanche Diode Based on Standard SOI CMOS Technology

Low Temperature p-type Microcrystalline Silicon as Carrier Selective Contact for Silicon Heterojunction Solar Cells

Silicon Photonic MEMS: Exploiting Mechanics at the Nanoscale to Enhance Photonic Integrated Circuits

Structural and microstructural studies on SiC-SiO2 ceramic composites

Design and Optimization of a Low Power and Fast Response Viscometer Used for Determination of the Natural Gas Wobbe Index

Thermorefractive noise in silicon-nitride microresonators

Acoustic Actuation Of Suspended Graphene For Linear Excitation Of 2D Nems

High performance Fully-vertical GaN-on-Si power MOSFETs

Shape memory polymer resonators as highly sensitive uncooled infrared detectors

Probing alloy formation using different excitonic species: The particular case of InGaN