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Dynamic stencil lithography on full wafer scale

Related publications (35)

Tailoring of Optical Properties of Alumina films deposited by High Vacuum CVD (HV-CVD)

Patrik Willi Hoffmann, Yury Kuzminykh, Xavier Multone, Bamdad Afra

The deposition of amorphous alumina (Al2O3) films on four inch wafers with high deposition rate (up to 50 nm/min) by an advanced HV-CVD technique is discussed. Amorphous nature of the films is confirmed by X-ray diffraction. Refractive index of the deposit ...
ECS - The Electrochemical Society2009

High vacuum chemical vapor deposition (HV-CVD) of alumina thin films

Xavier Multone

We analyzed along this work the feasibility to produce high quality alumina thin films by High Vacuum Chemical Vapor Deposition (HV-CVD). We study the influence of various parameters on the growth process and on the film quality, such as substrate temperat ...
EPFL2009

Er-doped Al2O3 thin films deposited by high-vacuum chemical vapor deposition (HV-CVD)

Patrik Willi Hoffmann, Xavier Multone

Erbium-doped amorphous aluminum oxide layers deposited on Si or oxidized silicon substrates are promising construction pieces for future monolytic integrated optoelectronics devices. In a novel high-vacuum chemical vapor deposition setup the alumina films ...
2008

Electrospray ion beam deposition and mass spectrometry of nonvolatile molecules and nanomaterials

Stephan Rauschenbach

The vacuum deposition of complex functional molecules and nanoparticles by thermal sublimation is often hindered due to their extremely low vapor pressure. This especially impedes the application of ultrahigh vacuum (UHV) based analytical and surface modif ...
EPFL2008

Control of morphology (ZrN crystallite size and SiNx layer thickness) in Zr-Si-N nanocomposite thin films

Rosendo Sanjines, Silviu Cosmin Sandu

DC reactive magnetron sputtering was used for the deposition of Zr–Si–N thin films. Four series of samples have been deposited at various substrate temperatures TS: 300 K, 510 K, 710 K and 910 K. Depending on TS, different N2 partial pressures pN2 were req ...
2008

Oxygen assisted focused electron beam induced deposition of silicon dioxide

Alexandre Perentes

Focused Electron Beam Induced Deposition (FEBID) is a rapid prototyping technique for the investigation, production and modification of 2 and 3-D nanostructures. The process takes place at room temperature, in the high-vacuum chamber of a Scanning Electron ...
EPFL2007

ELECTROSTATIC CLAMPING CHUCK FOR NANOSTENCILS

Jürgen Brugger, Hannes Bleuler, Marc Antonius Friedrich van den Boogaart

There is growing interest in using alternative, resistless patterning techniques. Stencil lithography or shadow masking is one of the possible solutions. By means of physical vapor deposition many different materials can be evaporated in vacuum and pattern ...
2006

Cubic and oriented Ag nano-particles by high vacuum evaporation

Libero Zuppiroli, Detlef Berner

Ag cubes of uniform size (70nm) and self-assembled into two dimensional arrays are formed by physical vapor deposition. The formation of the Ag cubes depends critically on the substrate composition. While heat dissipation can control the crystallization of ...
Nano Science and Technology Institute, Cambridge, MA 02139, United States2006

Nucleation and growth of ultrathin pentacene films on silicon dioxide: effect of deposition rate and substrate temperature

Frank Nüesch, Libero Zuppiroli

We report on a study of pentacene thin-films grown by high vacuum deposition on silicon dioxide, using atomic force microscopy (AFM) and transmission electron microscopy (TEM). The nucleation density of pentacene islands on SiO2is found to rise ...
Elsevier2004

Complex Oxide Nanostructures by Pulsed Laser Deposition through Nanostencils

Jürgen Brugger, Marc Antonius Friedrich van den Boogaart

A flexible method for simultaneous nanoscale structures fabrication and patterning is described, using a combination of stencil mask and pulsed-laser deposition (PLD) techniques. A miniature shadow-mask with nano-apertures in a very thin microfabricated me ...
2004

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