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A Fault Tolerant Ripple-Carry Adder with Controllable-Polarity Transistors

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Design Methodologies and CAD for Emerging Nanotechnologies

Shashi Kanth Bobba

With technology scaling reaching the fundamental limits of Si-CMOS in the near future, the semiconductor industry is in quest for innovation from various disciplines of integrated circuit (IC) design. At a fundamental level, technology forms the main drive ...

EPFL2013

Single-layer MoS₂

Branimir Radisavljevic

This thesis explores the electronic properties of one layered transition-metal dichalcogenide – single-layer MoS2, and demonstrates the first transistors and integrated circuits with characteristics that outperform graphene electronics in many aspects and ...

EPFL2013

Vertically-Stacked Silicon Nanowire Transistors with Controllable Polarity: a Robustness Study

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Hassan Ghasemzadeh Mohammadi

Vertically-stacked Silicon NanoWire FETs (SiN- WFETs) with gate-all-around control are the natural and most advanced extension of FinFETs. At advanced technology nodes, due to Schottky contacts at channel interfaces, devices show an ambipolar behavior, i.e ...

2013

Beyond Scaling

Luca De Michielis

Over the recent decades, the balance between increasing the complexity of computer chips and simultaneously reducing cost per bit has been accommodated by down-scaling. While extremely successful in the past, this approach now faces grave limitations leadi ...

EPFL2012

Tunnel field-effect transistors as energy-efficient electronic switches

Mihai Adrian Ionescu, Heike Riel

Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to inc ...

2011

Field-Effect Transistors Based on ZnO Nanowires

Daniel Dominik Kälblein

Semiconductor nanowires are an emerging class of materials with great potential for applications in future electronic devices. The small footprint and the large charge-carrier mobilities of nanowires make them potentially useful for applications with high- ...

EPFL2011

Process Variation and Leakage Power

Bahman Kheradmand Boroujeni

Technology scaling improves the energy, performance, and area of the digital circuits. With further scaling into sub-45nm regime, we are moving toward very low supply (VDD) and threshold voltages (VT), smaller VDD/VT ratio, high leakage current, and large ...

EPFL2011

Integrated Circuits and Logic Operations Based on Single-Layer MoS2

Andras Kis, Branimir Radisavljevic

Logic circuits and the ability to amplify electrical signals form the functional backbone of electronics along with the possibility to integrate multiple elements on the same chip. The miniaturization of electronic circuits is expected to reach fundamental ...

2011

Oscillator Based on Suspended Gate MOS Transistors

Mihai Adrian Ionescu, Marco Mazza, Yogesh Singh Chauhan, Alexandru Rusu

The paper deals with the oscillator applications based on vibrating mode of the suspended gate SG-MOSFET transistor. In order to simulate the electrical behavior of the transistor a small-signal equivalent circuit of the gate is proposed and validated. An ...

2008

Gate-all-around silicon nanowires for hybrid single electron transistor/CMOS applications

Vincent Pott

Scaling of semiconductor devices has pushed CMOS devices close to fundamental limits. The remarkable success story of Moore's law during the last 40 years, predicting the evolution of electronic device performances related to miniaturization, has always be ...

EPFL2007