Modelling electronic transport in monocrystalline metal oxide gas sensors: from the surface kinetics to the experimental response
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
In this thesis, angular resolved photoemission spectroscopy (ARPES) is used to study the electronic structure of different two-dimensional electron systems (2DES). This technique is very surface sensitive and the most direct method to probe the surface ban ...
Resonance Raman scattering measurements were performed on indium nitride thin films under conditions where the surface electron concentration was controlled by an electrolyte gate. As the surface condition is tuned from electron depletion to accumulation, ...
Single-layer transition metal dichalcogenide WSe2 has recently attracted a lot of attention because it is a 2D semiconductor with a direct band gap. Due to low doping levels, it is intrinsic and shows ambipolar transport. This opens up the possibility to r ...
Room-temperature (RT) ballistic transport of electrons is experimentally observed and theoretically investigated in III-nitrides. This has been largely investigated at low temperatures in low band gap III-V materials due to their high electron mobilities. ...
The structural and electronic properties of fcc-TaN/SiNx nanocomposite thin films deposited by reactive magnetron sputtering have been investigated as function of the N and Si contents. Our studies have been mainly focused on three different types of nanoc ...
We grew heavily Mg-doped GaN using ammonia molecular-beam epitaxy. The use of low growth temperature (740 degrees C) allows decreasing the incorporation of donor-like defects (
We study the atomic scale microstructure of non-stoichiometric two-dimensional(2D) transition metal dichalcogenide MoSe2-x, by employing aberration-corrected high-resolution transmission electron microscopy. We show that a Se-deficit in single layers of Mo ...
A physical model is presented for the semiconductor electrode of a photoelectrochemical cell. The model accounts for the potential drop in the Helmholtz layer and thus enables description of both band edge pinning and unpinning. The model is based on the c ...
The performance of silicon based microelectronic circuits reaches the end of the roadmap. New material systems are required for further improvements in speed and power consumption. Germanium is a possible candidate to substitute silicon for microelectronic ...
The Hall Effect sensors are one of the most commonly used sensing technologies today. They are employed in many applications for direct magnetic field sensing and serve a multitude of low power applications within automotive and industrial electronics as c ...
