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Front-End Circuits for Radiation-Hard Monolithic CMOS Sensors targeting High-Energy Physics Applications

Related publications (45)

The integration of technology in the medical field has greatly improved accuracy in diagnoses, thus leading to more effective treatments. Wearable and implantable medical devices offer great potential for remote patient monitoring, particularly for heart f ...

EPFL2023

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MALTA is a depleted monolithic active pixel sensor (DMAPS) developed in the Tower Semiconductor 180-nm CMOS imaging process. Monolithic CMOS sensors offer advantages over current hybrid imaging sensors in terms of both increased tracking performance due to ...

Piscataway2023

A Compact Front-End Circuit for a Monolithic Sensor in a 65-nm CMOS Imaging Technology

Edoardo Charbon, Francesco Piro

This article presents the design of a front-end circuit for monolithic active pixel sensors (MAPSs). The circuit operates with a sensor featuring a small, low-capacitance (

Piscataway2023

A 3D-Printed Functional Mems Accelerometer

Luis Guillermo Villanueva Torrijo, Damien Maillard, Göran Stemme, Simone Pagliano

3D printing of MEMS devices could enable the cost-efficient production of custom-designed and complex 3D MEMS for prototyping and for low-volume applications. In this work, we present the first micro 3D-printed functional MEMS accelerometers using two-phot ...

IEEE2023

A new versatile hybrid MEMS technology for high sensitivity, fluid proof sensing applications.

Matthias Neuenschwander

The field of micro electromechanical systems (MEMS) evolved from the microelectronic industry and the technologies developed to fabricate integrated circuits. As a result, MEMS are commonly fabricated on silicon wafers. The development of MEMS has been dri ...

EPFL2022

An All-Digital 1 Mbps, 57 pJ/bit Bluetooth Low Energy (BLE) Backscatter ASIC in 65 nm CMOS

James Daniel Rosenthal

We present an all-digital application specific integrated circuit (ASIC) that implements Bluetooth Low Energy (BLE)-compatible backscatter communication. The ASIC was fabricated in a 65 nm CMOS process and occupies an active area of 0.12 mm(2) while consum ...

IEEE2022

Recent results with radiation-tolerant TowerJazz 180 nm MALTA sensors

Francesco Piro, Abhishek Sharma

To achieve the physics goals of future colliders, it is necessary to develop novel, radiation-hard silicon sensors for their tracking detectors. We target the replacement of hybrid pixel detectors with Depleted Monolithic Active Pixel Sensors (DMAPS) that ...

ELSEVIER2022

Random flip-flop: adding quantum randomness to digital circuits for improved cyber security, artificial intelligence and more

Edoardo Charbon, Claudio Bruschini, Ivan Michel Antolovic, Mario Stipcevic

Harnessing quantum randomness for the generation of random numbers is an important concept crucial for information security and many other computer-related applications. Quantum random number generators (QRNGs) are evolving from bulky, slow, and expensive ...

SPIE2021

Monolithically Integrated Catalyst-Free High Aspect Ratio InAs-on-Insulator (InAsOI) FinFETs for pH Sensing

Mihai Adrian Ionescu, Fabien Patrick Wildhaber, Junrui Zhang, Maneesha Rupakula, Francesco Bellando, Clarissa Convertino

In this work, we report a novel Indium Arsenide-on-insulator (InAsOI) FinFET platform designed with record high aspect ratio that favors the use of the devices as charge sensors. InAs has very high mobility among III-V semiconductors and an intrinsic surfa ...

2020

Low-Cost Readout Electronics for Piezoresistive MEMS-Based Transducers

Marco Mattavelli, Diego Ruben Barrettino

The designs fabrication and testing of low-cost readout electronics for piezoresistive MEMS-based transducers are presented in this paper. The proposed circuit architecture has a low input referred noise power spectral density of 60nV/root Hz a latency of ...

IEEE2019

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