Diode modelling

Résumé

In electronics, diode modelling refers to the mathematical models used to approximate the actual behaviour of real diodes to enable calculations and circuit analysis. A diode's I-V curve is nonlinear. A very accurate, but complicated, physical model composes the I-V curve from three exponentials with a slightly different steepness (i.e. ideality factor), which correspond to different recombination mechanisms in the device; at very large and very tiny currents the curve can be continued by linear segments (i.e. resistive behaviour). In a relatively good approximation a diode is modelled by the single-exponential Shockley diode law. This nonlinearity still complicates calculations in circuits involving diodes so even simpler models are often used. This article discusses the modelling of p-n junction diodes, but the techniques may be generalized to other solid state diodes. Large-signal modelling Shockley diode model The Shockley diode equation relates the diode

Source officielle

https://en.wikipedia.org/wiki/Diode_modelling

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Jean-François Carlin, Alok Rudra

By means of Raman and photoluminescence measurements we have studied the effect of strain and confinement on the optical phonon spectrum of single InAs quantum wells. The frequency region of longitudinal optical phonons confined in both the InAs well and InP barrier layer has been studied. Simple modelling of the effects of the strain and the confinement on the InAs phonon is able to explain the dependence of the phonon frequencies on the layer thickness. Experimental evidence of vibrations localized at the InAs/InP interface is also reported and discussed. Finally, confinement of InP phonons in the layer between the InAs slab and the sample surface is observed and related to the structural features of the InAs well as deduced from photoluminescence measurements.

1994

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Confined exciton-polariton modes in a thin, homo-epitaxial, GaN film grown by molecular beam epitaxy

Nicolas Grandjean

We report the observation of confined modes in the mixed photon/exciton-like branches of exciton-polaritons propagating along the growth axis of a 700 nm-thick GaN film, deposited by Molecular Beam Epitaxy on bulk GaN substrates. The energies of the confined modes are in agreement with a simple modelling of quantized wavevectors in the thin layer, including the proper four-branch dispersion relation of polaritons in the wurtzite GaN. Such an observation results from the large coherence length of the exciton-polariton in the epilayer, testifying to the very good crystalline quality of the material. (C) 2001 Elsevier Science B.V. All rights reserved.

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