Publications associées à Amplificateur audio

Amorphous Silicon Based Microchannel Plates for Time-of-Flight Positron Emission Tomography

Microchannel plates fabricated from hydrogenated amorphous silicon (AMCPs) are a promising alternative to conventional lead glass microchannel plates. Their main advantages lie in their cheaper and more flexible fabrication processes, allowing for adaptabl ...

EPFL2023

Ultra-Low Power Short-Range 60-GHz FMCW Radar Front-End

Sammy Cerida Rengifo

The millimeter wave (mmWave) frequency band is becoming very interesting over the past years because it provides the opportunity to operate using large bandwidths which are not available at lower frequencies. This enables new communication standards suppor ...

EPFL2023

Nanoplasma-based Millimiter-wave Modulators on a Single Metal Layer

Elison de Nazareth Matioli, Mohammad Samizadeh Nikooytabalvandani

Fundamental constraints imposing power-frequency trade-offs in conventional electronics have stimulated research on alternative technologies for millimeter-wave and sub-millimeter-wave applications. In this work, we use the picosecond threshold firing of n ...

Institute of Electrical and Electronics Engineers2022

A Cryo-CMOS Wideband Quadrature Receiver With Frequency Synthesizer for Scalable Multiplexed Readout of Silicon Spin Qubits

Edoardo Charbon, Andrea Ruffino, Yatao Peng

In this article, a cryo-CMOS receiver integrated with a frequency synthesizer for scalable multiplexed readout of qubits is presented, focusing on radio frequency (RF) reflectometry readout of silicon-based semiconductor spin qubits/quantum dots. The propo ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Blumino: The First Fully Integrated Analog SiPM With On-Chip Time Conversion

Edoardo Charbon, Andrei Ardelean, Emanuele Ripiccini, Andrada Alexandra Muntean, Esteban Venialgo Araujo

Blumino is the first analog silicon photomultiplier with integrated amplifier, comparator and time-to-digital converter (TDC). The combination of a photodetector together with on-chip readout circuitry enables system-level advantages, such as internal para ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

Measurements and analysis of different front-end configurations for monolithic SiGe BiCMOS pixel detectors for HEP applications

Edoardo Charbon

This paper presents a small-area monolithic pixel detector ASIC designed in 130 nm SiGe BiCMOS technology for the upgrade of the pre-shower detector of the FASER experiment at CERN. The purpose of this prototype is to study the integration of fast front-en ...

IOP Publishing Ltd2021

Power-Optimized Digitally Controlled Oscillator in 28-nm CMOS for Low-Power FMCW Radars

Christian Enz, Francesco Chicco, Franz Xaver Pengg, Sammy Cerida Rengifo

This work presents the design of a 24-GHz digitally controlled oscillator (DCO) in an advanced 28-nm bulk CMOS technology for short-range frequency-modulated continuous-wave radar system-on-chip for mobile and Internet-of-Things devices. The power minimiza ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

Method and apparatus for volumetric additive manufacturing with digital distortion compensation

Christophe Moser, Paul Delrot, Damien Claude-Marie Loterie

The present invention is related to a method of digitally compensating distortions of rays of a light beam in tomography- based additive manufacturing, wherein said tomography-based additive manufacturing involves projecting light patterns from multiple an ...

2021

Performance of chip-scale optical frequency comb generators in coherent WDM communications

Tobias Kippenberg

Optical frequency combs have the potential to become key building blocks of wavelength-division multiplexing (WDM) communication systems. The strictly equidistant narrow-band spectral lines of a frequency comb can serve either as carriers for parallel WDM ...

2020

AlGaN/GaN Nanowires: from Electron Transport to RF Applications

Giovanni Santoruvo

Gallium Nitride (GaN) and all III-Nitride compounds have revolutionized the world with the development of the blue light emitting diode (LED). In addition, GaN-based epi-structures, such as AlGaN/GaN, enable the fabrication of high electron mobility transi ...

EPFL2020