Publications de Marco Malinverni

Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy

Nicolas Grandjean, Marco Malinverni, Denis Martin, Hironori Okumura

We grew heavily Mg-doped GaN using ammonia molecular-beam epitaxy. The use of low growth temperature (740 degrees C) allows decreasing the incorporation of donor-like defects (

Amer Inst Physics2016

InGaN laser diode with metal-free laser ridge using n(+)-GaN contact layers

Nicolas Grandjean, Antonino Francesco Castiglia, Marco Malinverni, Marco Rossetti, Camille Haller, Denis Martin

We report on InGaN edge emitting laser diodes with a top metal electrode located beside the laser ridge. Current spreading over the ridge is achieved via a highly doped n(+)-type GaN layer deposited on top of the structure. The low sheet resistance of the ...

Iop Publishing Ltd2016

Optimization of NH₃-MBE grown p-doped (Al)GaN layers and their implementation in long wavelength laser diodes and tunnel junctions

Marco Malinverni

Over the last two decades III-nitride optoelectronic devices have experienced an impressive evolution in terms of performance. However, their potential is far from being fully exploited. Although they offer bandgaps from the deep UV to the infrared spectra ...

EPFL2015

InGaN laser diodes emitting at 500 nm with p-layers grown by molecular beam epitaxy

Nicolas Grandjean, Julien Dorsaz, Eric Feltin, Antonino Francesco Castiglia, Marco Malinverni, Jean-Michel Jacques Lamy, Marco Rossetti, Lise Lahourcade, Denis Martin

We demonstrate hybrid laser diodes by combining n-type layers and an active region grown by metal organic vapor phase epitaxy with p-type layers grown by molecular beam epitaxy. These p-doped layers, grown at 740 degrees C, exhibit state-of-the-art electri ...

Japan Society of Applied Physics2015

InGaN based micro light emitting diodes featuring a buried GaN tunnel junction

Nicolas Grandjean, Marco Malinverni, Denis Martin

GaN tunnel junctions (TJs) are grown by ammonia molecular beam epitaxy. High doping levels are achieved with a net acceptor concentration close to similar to 10(20) cm(-3), thanks to the low growth temperature. This allows for the realization of p-n juncti ...

Amer Inst Physics2015

94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts

Nicolas Grandjean, Jean-François Carlin, Marco Malinverni, Lorenzo Lugani

We report the first 94-GHz (W-band) large-signal performance of AlInN/GaN high-electron-mobility transistors (HEMTs) grown on high-resistivity silicon (111) substrates. A maximum output power density of 1.35 W/mm and peak power-added-efficiency of 12% are ...

Institute of Electrical and Electronics Engineers2015

Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

Nicolas Grandjean, Julien Dorsaz, Eric Feltin, Antonino Francesco Castiglia, Marco Malinverni, Jean-Michel Jacques Lamy, Denis Martin

We demonstrate state-of-the-art p-type (Al) GaN layers deposited at low temperature (740 degrees C) by ammonia molecular beam epitaxy (NH3-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGa ...

Amer Inst Physics2014

n(+)-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts

Nicolas Grandjean, Jean-François Carlin, Etienne François Olivier Giraud, Marco Malinverni, Lorenzo Lugani, Daniel Marti

We report on the low-temperature growth of heavily Si-doped (>10(20) cm(-3)) n(+)-type GaN by N-rich ammonia molecular beam epitaxy (MBE) with very low bulk resistivity (

Amer Inst Physics2014

High-Mobility AlGaN/GaN Two-Dimensional Electron Gas Heterostructure Grown on (111) Single Crystal Diamond Substrate

Nicolas Grandjean, Marco Malinverni, Pierre Stadelmann, Denis Martin, Anas Mouti, Marcel Py, Marcus Gonschorek

High mobility Al0.28Ga0.72N/GaN two-dimensional electron gas (2DEG) is achieved on ( 111) oriented single crystal diamond substrate. The surface morphology of the epilayer is free of cracks thanks to the use of an AlN interlayer for strain relaxation. The ...

2010

GaN grown on (111) single crystal diamond substrate by molecular beam epitaxy

Nicolas Grandjean, Antonino Francesco Castiglia, Marco Malinverni, Denis Martin

GaN epilayers are grown on (111) oriented single crystal diamond substrate by ammonia-source molecular beam epitaxy. Each step of the growth is monitored in situ by reflection high energy electron diffraction. It is found that a two-dimensional epitaxial w ...

2009