Publication
Selective oxidation and selective etching of allnn layers for manufacturing group iii nitride semiconductor devices
Publications associées (32)
GaN growth on ScAlMgO4 substrates via thermally-dewetted thin Al films
Elison de Nazareth Matioli, Alessandro Floriduz
In this note, we demonstrate the high-temperature growth of GaN on ScAlMgO4 substrates by metalorganic vapor phase epitaxy when a thin Al film is deposited ex situ on the ScAlMgO4 surface, prior to GaN growth. Mirror-like high-quality GaN epitaxial layers ...
IOP Publishing Ltd2022III-Nitride Semiconductor Photonic Nanocavities on Silicon
Optical nanocavities enhance light-matter interaction due to their high quality factors (Q) and small modal volumes (V). The control of light-matter interaction lies at the heart of potential applications for integrated optical circuits, including optical ...
EPFL2018Multilayer porous structures on GaN for the fabrication of Bragg reflectors
Nicolas Grandjean, Jean-François Carlin, Denis Martin
We report on the development of electrochemical etching technology for the production of multilayer porous structures |(MPS) allowing one to fabricate Bragg reflectors on the basis of GaN bulk substrates grown by Hydride Vapor Phase Epitaxy |(HVPE). The fo ...
Spie-Int Soc Optical Engineering2017Critical thickness of GaN on AlN: impact of growth temperature and dislocation density
Nicolas Grandjean, Pirouz Sohi, Denis Martin
Critical thickness and strain relaxation of c-plane GaN layers grown by molecular beam epitaxy on AlN were studied as a function of growth temperature and threading dislocation density (TDD). For this purpose we used AlN/sapphire templates and AlN single c ...
2017Nearly perfect GaN crystal via pit-assisted growth by HVPE
We demonstrated 5 mm-thick bulk gallium nitride (GaN) with nearly perfect crystal quality. To achieve this, intentional etch pit formation by in situ dry HCl etching and ex situ wet etching in H3PO4 solution was employed on freestanding GaN templates follo ...
Royal Soc Chemistry2017Thin-Wall GaN/InAlN Multiple Quantum Well Tubes
Nicolas Grandjean, Jean-François Carlin, Raphaël Butté
Thin-wall tubes composed of nitride semiconductors (III-N compounds) based on GaN/InAlN multiple quantum wells (MQWs) are fabricated by metalorganic vapor-phase epitaxy in a simple and full III-N approach. The synthesis of such MQW-tubes is based on the gr ...
Amer Chemical Soc2017Fabrication defects and grating couplers in III-nitride photonic crystal nanobeam lasers (Conference Presentation)
Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Ian Michael Rousseau
We report a numerical and experimental investigation of fabrication tolerances and outcoupling in optically pumped III-nitride nanolasers operating near lambda = 460 nm, in which feedback is provided by a one-dimensional photonic crystal nanobeam cavity an ...
Spie-Int Soc Optical Engineering2016InGaN laser diodes emitting at 500 nm with p-layers grown by molecular beam epitaxy
Nicolas Grandjean, Eric Feltin, Julien Dorsaz, Antonino Francesco Castiglia, Marco Malinverni, Marco Rossetti, Jean-Michel Jacques Lamy, Denis Martin, Lise Lahourcade
We demonstrate hybrid laser diodes by combining n-type layers and an active region grown by metal organic vapor phase epitaxy with p-type layers grown by molecular beam epitaxy. These p-doped layers, grown at 740 degrees C, exhibit state-of-the-art electri ...
Japan Society of Applied Physics2015Optimization of NH₃-MBE grown p-doped (Al)GaN layers and their implementation in long wavelength laser diodes and tunnel junctions
Over the last two decades III-nitride optoelectronic devices have experienced an impressive evolution in terms of performance. However, their potential is far from being fully exploited. Although they offer bandgaps from the deep UV to the infrared spectra ...
EPFL2015Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green
Nicolas Grandjean, Denis Martin, Nils Asmus Kristian Kaufmann
Transmission electron microscopy and photoluminescence investigations have been carried out on a series of quantum wells grown by molecular beam epitaxy and metal organic vapour phase epitaxy. In both cases, the emission wavelength and the peak width agree ...
2011