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A Timing-Monitoring Sequential for Forward and Backward Error-Detection in 28 nm FD-SOI

Publications associées (32)

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Substrate Current Optimization in Smart Power ICs

Pietro Buccella

Safety requirements for modern automotive electronics call for more and more robust power integrated circuits. The mixed-signal IC design flow alone is often no longer capable of tracking possible design failures in complex Smart Power integrated circuits ...

EPFL2016

New Data Structures and Algorithms for Logic Synthesis and Verification

Luca Gaetano Amarù

The strong interaction between Electronic Design Automation (EDA) tools and Complementary Metal-Oxide Semiconductor (CMOS) technology contributed substantially to the advancement of modern digital electronics. The continuous downscaling of CMOS Field Effec ...

EPFL2015

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Compressive sampling (CS) offers bandwidth, power, and memory size reduction compared to conventional (Nyquist) sampling. These are very attractive features for the design of modern complementary metal-oxide semiconductor (CMOS) image sensors, cameras, and ...

Wiley-Blackwell2015

A 2.4-GHz low power polar transmitter for wireless body area network applications

Christian Enz, Vladimir Kopta, Franz Xaver Pengg

A 2.4 GHz low power polar transmitter is proposed in this paper. A dynamic biasing circuit, controlled by a digital envelope signal, is used as a direct digital-to-RF envelope converter. It effectively linearizes the input-output characteristic of the over ...

Springer Verlag2014

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In this paper, we propose a methodology to evaluate the potential of submicrometer organic thin-film transistors (OTFTs) with nanoimprinted gate and self-aligned source and drain contacts. In the first step, the dedicated static model we previously reporte ...

Institute of Electrical and Electronics Engineers2014

A Circuit Synthesis Flow for Controllable-Polarity Transistors

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Luca Gaetano Amarù

Double-Gate (DG) controllable-polarity Field-Effect Transistors (FETs) are devices whose n- or p- polarity is on-line configurable by adjusting the second gate voltage. Such emerging transistors have been fabricated in silicon nanowires, carbon nanotuges a ...

Institute of Electrical and Electronics Engineers2014

CMOS Digital Integrated Circuits: Analysis & Design, 4th Edition

Yusuf Leblebici, Sung Mo Kang

The fourth edition of CMOS Digital Integrated Circuits: Analysis and Design continues the well-established tradition of the earlier editions by offering the most comprehensive coverage of digital CMOS circuit design, as well as addressing state-of-the-art ...

McGraw-Hill Higher Education2014

Design Methodologies and CAD for Emerging Nanotechnologies

Shashi Kanth Bobba

With technology scaling reaching the fundamental limits of Si-CMOS in the near future, the semiconductor industry is in quest for innovation from various disciplines of integrated circuit (IC) design. At a fundamental level, technology forms the main drive ...

EPFL2013

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This work presents different circuit architectures that combine sensing and signal readout functions. The basic building block is a Fin Field-Effect Transistor (Fin-FET) used as both sensor and metal gate transistor. Moreover, a hybrid partially gated FinF ...

Elsevier2013

The electronics industry is present nowadays in the most various applications. A new type of technology for integrated circuits named BCD has started to be developed and appeared from the mid 1980’s. This new technology allows integrating bipolar transisto ...

EPFL2012