Monolithically Integrated Catalyst-Free High Aspect Ratio InAs-on-Insulator (InAsOI) FinFETs for pH Sensing
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The motivation for this project is to prevent optical cross-talk in an optical sensor array, named ommatidia and fabricated in the CURVACE project. The goals of the project are to show that Micromoulding in Capillaries (or MIMIC) is a very effective and co ...
The epitaxial growth of quantum rods (QRs) on GaAs was investigated. It was found that GaAs thickness in the GaAs/InAs superlattice used for QR formation plays a key role in improving the QR structural properties. Increasing the GaAs thickness results in b ...
Modern communication devices demand challenging specifications in terms of miniaturization, performance, power consumption and cost. Every new generation of radio frequency integrated circuits (RF-ICs) offer better functionality at reduced size, power cons ...
For the past couple of decades the desire to add more complexity to a computer chip, while simultaneously reducing the cost per bit, has been accommodated by down-scaling. This approach has been extremely successful in the past, but like all good things it ...
Recently, artificial intelligence (AI) systems gain an increasing popularity and their development is fast. One of the most important fields of the AI system development are artificial neural networks (ANN’s) which, due to continuous progress in microelect ...
A nanoelectromechanical mass sensor is used to characterize material deposition rates in stencil lithography. The material flux through micron size apertures is mapped with high spatial (below 1 μm) and deposition rate (below 10 pm/s) resolutions by displa ...
In this paper,we present an inductive proximity sensor with fully integrated electronics. The sensor with the compact hybrid configuration is composed of a sensing flat coil and an integrated electronic interface. We focused during the development on the t ...
Wafer-scale nanostencil lithography (nSL) is used to define several types of silicon mechanical resonators, whose dimensions range from 20 μm down to 200 nm, monolithically integrated with CMOS circuits. We demonstrate the simultaneous patterning by nSL of ...
Radiation detectors based on the deposition of a 10 to 30 μm thick hydrogenated amorphous silicon (a-Si:H) sensor directly on top of integrated circuits have been developed. The performance of this detector technology has been assessed for the first time i ...
The aim of this research is to develop and to evaluate devices and circuits performances based on ultrathin nanograin polysilicon wire (polySiNW) dedicated to room temperature operated hybrid CMOS-"nano" integrated circuits. The proposed polySiNW device is ...
